Abstract:SnSe crystals have been discovered as one of the most efficient thermoelectric materials due to their remarkable thermal and electrical transports. But the polycrystalline SnSe possesses much lower performance especially for the low carrier mobility and electrical conductivity. We firstly attempted to explain and verify the difference in the electrical conductivity as a function of temperature between p-type crystalline and polycrystalline SnSe by considering the grain boundary effects in the polycrystalline samples. On the basis of 2% Na doping to optimize the carrier concentration, the carrier mobility is improved by further introducing In, leading to enhanced carrier mobility from 3 to 9 cm2·V−1·s−1 in polycrystalline SnSe. Moreover, In doping introduces extra resonant levels in SnSe, which increases the density of states near Fermi level and leads to an enhanced band effective mass. Large Seebeck coefficient of ~ 205 μV·K−1 at 300 K and maximum power factor of ~ 7.5 μW·cm−1·K−2 at 773 K can be obtained in the Sn0.975Na0.02In0.005Se sample, leading to a competitively high dimensionless figure of merit (ZT) value exceeding 1.1 at 773 K.摘要晶体 SnSe 由于出色的电声传输性能, 不断表现出优异的热电特性。但是, 相对于晶体, 多晶 SnSe 的电导率和载流子迁移率呈现数量级的降低。首先, 我们试图通过考虑多晶样品中晶界的影响来解释 p 型晶体 SnSe 和多晶 SnSe 的电导率随温度变化的差异。通过掺杂 2% 的 Na 来优化多晶 SnSe 的载流子浓度, 在此基础上引入 In 提高了基体的载流子迁移率, 样品的室温迁移率由 3 cm2·V-1·s-1增加到 9 cm2·V-1·s-1。此外, 通过在多晶 SnSe 中掺杂 In 引入了额外的共振能级, 增加了费米能级附近的态密度, 提高了能带有效质量。引入 In 之后, Sn0.975Na0.02In0.005Se样品在 300 K 时的塞贝克系数从 ~ 137提高到 ~ 205 μ V·K-1, 在 773 K 时的最大功率因子从 ~ 3.9提高到 ~ 7.5 μ W·cm-1·K-2, 使热电优值 (ZT) 在 773 K 时超过了 1.1Graphical Abstract

Low Carrier Concentration Leads to High In-Plane Thermoelectric Performance in N-Type SnS Crystals

High Carrier Mobility Promotes In‐Plane Thermoelectric Performance of N‐type PbSnS2 Crystals

Realizing high-ranged thermoelectric performance in PbSnS2 crystals

Realizing High Thermoelectric Performance of Polycrystalline SnS Through Optimizing Carrier Concentration and Modifying Band Structure

Insight into Carrier and Phonon Transports of PbSnS2 Crystals

Realizing High In-plane Carrier Mobility in N-type SnSe Crystals through Deformation Potential Modification

Enhanced Thermoelectric Performance in Li Doped SnS Via Carrier Concentration Optimization

Thermoelectric Properties of SnS with Na-Doping.

Remarkable Electron and Phonon Transports in Low-Cost SnS: A New Promising Thermoelectric Material

The comprehensive first-principle study of the thermoelectric performance of p- and n-type SnS

High Thermoelectric Efficiency Of N-Type Pbs

Doping Achieves High Thermoelectric Performance in SnS: A First-Principles Study

Stepwise Optimization of Thermoelectric Performance in n‐Type SnS

Phonon and Carrier Transport Properties in Low-Cost and Environmentally Friendly SnS 2 : A Promising Thermoelectric Material

Phonon and Carrier Transport Properties in Low-Cost and Environmentally Friendly SnS2: A Promising Thermoelectric Material

Thermoelectrics with earth abundant elements: low thermal conductivity and high thermopower in doped SnS

Realizing High Thermoelectric Performance in P-Type SnSe Through Crystal Structure Modification

High Thermoelectric Figure of Merit ZT > 1 in SnS Polycrystals

Thermoelectric Performance Enhancement in SnS Polycrystals Owing to Hole Doping Combined with Textured Microstructures

Attaining Enhanced Thermoelectric Performance in P-Type (snse)1–(sns2) Produced Via Sintering Their Solution-Synthesized Micro/nanostructures

Realizing high thermoelectric properties in p-type polycrystalline SnSe by inducing DOS distortion