Abstract:Fano resonance is considered to be a promising approach for integrated sensing. However, achieving and controlling Fano resonance lineshapes on ultra-compact chips remains a challenge. In this article, we propose a theoretic model based on the transfer matrix method (TMM) to quantitatively interpret the impact of a micro-reflective unit (MRU) etched in the straight waveguide of a microring resonator (MRR). Numerical calculations and FDTD simulations indicate that the size and position of the MRU can be used to control the Fano resonance lineshape. Since the MRU is etched in the coupling region, the reflection caused by the MRU will significantly enhance the intensity of the counter-clockwise (CCW) mode in the microring. When applied to a single nanoparticle sensing, clockwise (CW) and CCW modes will couple due to a single nanoparticles or rough cavity walls, resulting in a sharp shift and split of the Fano lineshape. The proposed model for single nanoparticle sensing is described by the scattering matrix, and the calculations show a well matches with FDTD simulations. The results show that the model proposed in this paper provides a new theoretical basis for controlling Fano resonance lineshape and presents a new approach for the integrated sensing of silicon photonic devices with high sensitivity.

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