Configurable in-memory computing architecture based on dual-port SRAM
Yue Zhao,Yunlong Liu,Jian Zheng,Zhongzhen Tong,Xin Wang,Runru Yu,Xiulong Wu,Yongliang Zhou,Chunyu Peng,Wenjuan Lu,Qiang Zhao,Zhiting Lin
DOI: https://doi.org/10.1016/j.mejo.2024.106163
IF: 1.992
2024-03-22
Microelectronics Journal
Abstract:In the emerging field of in-memory computing (IMC), this study proposes a dual-port Static Random Access Memory (SRAM) IMC architecture with the distinct capability of realizing XOR encryption (XORE), thus serving as a potential solution for the von Neumann bottleneck. Beyond providing traditional SRAM read and write operations, the proposed architecture carries out additional tasks such as multi-bit multiply and accumulate (MAC) and XOR accumulation (XORA). The architecture was simulated using a 28-nm Complementary Metal Oxide Semiconductor Process, demonstrating a minor standard deviation of 9.41 mV in bit line voltage at the SS process corner, as evidenced by Monte Carlo simulation. Energy expenditure for the MAC, XORA, and XORE, was found to be 1.65, 1.46, and 9.02 fJ/ops respectively at the TT process corner. Furthermore, the presented architecture showed considerable energy efficiency, with MAC, XORA, and XORE operations achieving energy efficiency values of 604.9, 682.7, and 110.8 TOPS/W respectively, at a supply voltage of 0.9 V at the TT process corner.
engineering, electrical & electronic,nanoscience & nanotechnology