Flexible Waveguide-Integrated Photodetectors

Lan Li,Hongtao Lin,Yizhong Huang,Junying Li,Spencer Novak,Kathleen Richardson,Juejun Hu

DOI: https://doi.org/10.1364/cleo_si.2017.stu1n.1

2017-01-01

Abstract:We demonstrated a flexible waveguide-integrated metal-semiconductor-metal photodetector with 0.5 A/W responsivity near 1550 nm wavelength. The device can withstand a small bending radius of 0.7 mm without optical performance degradation.

What problem does this paper attempt to address?

High-performance Flexible Waveguide-Integrated Photodetectors

Lan Li,Hongtao Lin,Yizhong Huang,Ren-Jye Shiue,Anupama Yadav,Junying Li,Jerome Michon,Dirk Englund,Kathleen Richardson,Tian Gu,Juejun Hu

DOI: https://doi.org/10.1364/optica.5.000044

IF: 10.4

2018-01-01

Optica

Abstract:Mechanically flexible photonic devices are essential building blocks for novel bio-integrated optoelectronic systems, wearable sensors, and flexible consumer electronics. Here we describe the design and experimental demonstration of high-performance flexible semiconductor nanomembrane photodetectors integrated with single-mode chalcogenide glass waveguides. Through a combination of a waveguide-integrated architecture to enhance light-matter interactions and mechanical engineering of multilayer configurations to suppress strains, the detector devices exhibit record optical and mechanical performance. The devices feature a noise equivalent power as low as 0.02 pW.Hz(1/2), a linear dynamic range exceeding 70 dB, and a 3-dB bandwidth of 1.4 GHz, all measured at 1530 nm wavelength. The devices withstand 1000 bending cycles at a submillimeter radius without degradation in their optoelectronic responses. These metrics represent significant improvements over state-of-the-art flexible photodetectors. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Strain-Engineering-Driven Photomechanical–Photoelectric Coupled Flexible Photodetector Based on Hexagonal Silicon Nanowire Films

Linlin Fan,Lei Wang,Deren Yang,Dongsheng Li

DOI: https://doi.org/10.1021/acsphotonics.4c00367

IF: 7

2024-01-01

ACS Photonics

Abstract:Narrow band gap and photon-trapping structures of hexagonal silicon nanowire films were adopted for the photodetector (PD). To obtain higher carrier mobility and longer cutoff wavelengths, strain-engineering-induced wrinkled surface structures were utilized to overcome the band gap limitation and improve photoabsorption. The PDs were flexible, lightweight, tailorable, scalable, and semitransparent. Moreover, they could withstand 33% of tensile strain without structural damage, and the light resistor presents high sensitivity to tensile force and could be used as an optical force sensor. In the unstretched state, the responsivities at 375, 532, 1342, and 1550 nm reached a maximum of 41.72, 55.51, 3.41, and 6.38 mAW-1, respectively, with fastest rise and fall times of 508 and 677 mu s, respectively, and a high specific detectivity of 2.8 x 10(8) Jones (1550 nm at 5 V). Such fast photodetection from UV to NIR in silicon nanowire systems shows promising potential for flexible piezoelectric-photoelectric coupled detection applications.
Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Jianghong Wu,Hui Ma,Chuyu Zhong,Maoliang Wei,Chunlei Sun,Yuting Ye,Yan Xu,Bo Tang,Ye Luo,Boshu Sun,Jialing Jian,Hao Dai,Hongtao Lin,Lan Li

DOI: https://doi.org/10.1021/acs.nanolett.2c02099

IF: 10.8

2022-01-01

Nano Letters

Abstract:Hybrid integration of van der Waals materials on a photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation integrated photonic circuits, but developing waveguide-integrated photodetectors based on conventionally investigated transition metal dichalcogenide materials at the full optical telecommunication bands and mid-infrared range is still a challenge. Here, we integrate PdSe2 with silicon waveguide for on-chip photodetection with a high responsivity from 1260 to 1565 nm, a low noise-equivalent power of 4.0 pWmiddotHz(-0.5), a 3-dB bandwidth of 1.5 GHz, and a measured data rate of 2.5 Gbitmiddots(-1). The achieved PdSe2 photodetectors provide new insights to explore the integration of novel van der Waals materials with integrated photonic platforms and exhibit great potential for diverse applications over a broad infrared range of wavelengths, such as on-chip sensing and spectroscopy.
Flexible InGaAs Photodetector With High-Speed Detection and Long-Term Stability

Yuting Ye,Hui Ma,Jianghong Wu,Boshu Sun,Jialing Jian,Maoliang Wei,Renjie Tang,Yilin Shi,Hongtao Lin,Lan Li

DOI: https://doi.org/10.1109/jstqe.2024.3350431

IF: 4.9

2024-05-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:Flexible photodetectors have garnered extensive research interest due to their potential applications in optical communications, sensing, and wearable systems. However, their operating frequencies have been limited to less than 10 MHz, which falls significantly below the requirements for certain applications. Here, we present a high-performance flexible photodetector based on InGaAs nanomembrane fabricated on a flexible plastic foil, where epitaxial layers are bonded with adhesives before being lifted from the parent InP substrate via a simple wet etching step. No mechanical polishing is involved, reducing the complexity of the fabrication procedure. The flexible photodetector exhibits impressive characteristics, including a low dark current of 801 pA, a responsivity of 0.51 AW, a high detectivity of 5.65 1010 Jones, and a linear dynamic range over 70 dB at an applied voltage of 6 V in 1550 nm. Furthermore, we have prioritized efficient and high-speed collection of photogenerated carriers by optimizing the design of interdigitated detection electrodes. Dynamic measurements indicate that the photodetector surpasses a 3-dB bandwidth of 2.03 GHz, enabling it to support a data communication rate of 4 Gbs. Additionally, this flexible photodetector demonstrates a wide operational wavelength range, covering nearly the entire telecom band from 1260 nm to 1620 nm, in both its planar state and half-cylindrically curved shape. More importantly, the obtained photodetector maintains high performance with long-term thermal and mechanical stability, holding great potential for developing advanced high-speed optoelectronics in wearable devices.

engineering, electrical & electronic,optics,physics, applied,quantum science & technology
Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Jianghong Wu,Hui Ma,Chuyu Zhong,Maoliang Wei,Chunlei Sun,Yuting Ye,Yan Xu,Bo Tang,Ye Luo,Boshu Sun,Jialing Jian,Hao Dai,Hongtao Lin,Lan Li

DOI: https://doi.org/10.21203/rs.3.rs-1399761/v1

2022-01-01

Abstract:Abstract Hybrid integration of two-dimensional (2D) materials on a silicon photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation silicon integrated photonic circuits. 2D transition metal dichalcogenide materials (TMDCs) have attracted extensive attention for photodetectors, but developing high-performance waveguide-integrated photodetectors based on conventionally investigated 2D TMDCs at the telecom C-band is still a big challenge because of their large optical bandgap and slow carrier mobility. Here, we propose PdSe2, a new type of 2D TMDC, to be integrated with silicon photonic components for on-chip photodetection with high responsivity and speed in the datacom and telecom optical bands ranging from the O-band to the C-band. The obtained waveguide-integrated photodetectors show a high responsivity of 1190.2 mA W−1 at 1550 nm and a low noise-equivalent power of 4.0 pW Hz-0.5 at 5V. The 3 dB bandwidth reaches up to 1.5 GHz, and the measured data rate is 2.5 Gbit s−1. The achieved PdSe2 photodetectors provide new insights to explore the integration of novel 2D TMDCs with silicon photonics and demonstrate the potential of integrated photodetectors for applications in diverse areas, including optical communications, on-chip spectroscopy, and sensing.
(Invited) Mechanically Flexible Integrated Photonic Systems for Sensing and Communications

Lan Li,Hongtao Lin,Jerome Michon,Sarah Geiger,Junying Li,Hanyu Zheng,Yizhong Huang,Anupama Yadav,Kathleen Richardson,Tian Gu,Juejun Hu

DOI: https://doi.org/10.1149/07707.0037ecst

2017-01-01

Abstract:Conventional integrated photonic devices are fabricated on rigid semiconductor or dielectric substrates and are therefore inherently incompatible with soft biological tissues. Over the past few years, we have developed a suite of active and passive photonic devices and systems integrated on plastic substrates which can be bent, twisted, and stretched without compromising their optical performance. Here we review the latest progress in this emerging field, and discuss the rational material and mechanical engineering principles underlying the extraordinary flexibility of these photonic structures. Leveraging these design strategies, we demonstrated bendable glass waveguide circuits, flexible waveguide-integrated nanomembrane photodetectors, and stretchable photonics.
Flexible Organic-Inorganic Hybrid Photodetectors with N-Type Phenyl-C61-butyric Acid Methyl Ester (PCBM) and P-Type Pearl-Like GaP Nanowires

Gui Chen,Xuming Xie,Guozhen Shen

DOI: https://doi.org/10.1007/s12274-014-0537-5

2014-01-01

Abstract:Flexible photodetectors have become a focus of current researches because they may offer some unique applications in various new areas that require flexible, lightweight, and mechanical shock-resistive sensing elements. In this work, we designed flexible organic-inorganic hybrid photodetectors on various flexible substrates, including polyethylene terephthalate (PET), common Sellotape and polydimethylsiloxane (PDMS), with n-type phenyl-C61-butyric acid methyl ester (PCBM) and p-type pearl-like GaP nanowires (NWs) as the active materials. The as-fabricated hybrid devices exhibited an optimized performance superior to the device made of pristine GaP NWs, with a fast response time (43 ms) and high on/off ratio (∼170). Under different bending conditions, the flexible hybrid photodetectors demonstrated excellent flexibility and electrical stability, which make them very promising for further large-scale, high sensitivity and high speed photodetector applications.
Ultracompact On-Chip Long-Wave Photodetector Based On Hybrid Plasmonic Waveguides

Hao Wu,Xiaowei Guan,Daoxin Dai

2014-01-01

Abstract:An ultra-small on-chip long-wave photodetector by utilizing the thermal resistance effect of the metal strip on a hybrid plasmonic waveguide structure. When light propagates along a hybrid plasmonic waveguide, the metal strip is heated due to the light absorption. Accordingly, the resistance of the metal strip increases due to the thermal-resistance effect of metal and the resistance change can be measured accurately with a Wheatstone bridge so that the photodetector is with very high sensitivity. Owing to the nano-scale confinement of light in a hybrid plasmonic waveguide, the temperature increase of metal due to the metal absorption is enhanced in comparison with the conventional long-range plasmonic waveguide. A theoretical responsivity of as high as 74 mV/mW is obtained with a low bias voltage of 1 V. The photodetector also has a fast response (< 1 mu s) and works in a very broad wavelength range (e.g., 1.5 similar to 7.5 mu m).
High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

Jialing Jian,Jianghong Wu,Chuyu Zhong,Hui Ma,Boshu Sun,Yuting Ye,Ye Luo,Maoliang Wei,Kunhao Lei,Ruizhe Liu,Zequn Chen,Guangyi Li,Hao Dai,Renjie Tang,Chunlei Sun,Junying Li,Wei Li,Ming Li,Hongtao Lin,Lan Li

DOI: https://doi.org/10.1021/acsphotonics.3c00453

IF: 7

2023-01-01

ACS Photonics

Abstract:Waveguide-integrated photodetectors are essential components in integrated photonic circuits since they facilitate light conversion into electrical signals. Nonetheless, optical absorption and carrier collection can significantly affect the device performance. As a solution to this issue, plasmonic slot waveguides confine optical energy within a subwavelength scale in a photoconductive detector, enhancing optical absorption and providing extremely short channels to collect carriers. Two-dimensional van der Waals layered palladium selenide (PdSe2) exhibits the merits of a narrow bandgap and high carrier mobility, thus positioning it as a favorable candidate material for photodetectors operating at the telecommunication band. In this study, we propose and experimentally verify a high-speed PdSe2-plasmonic waveguide-integrated photodetector with a dark current of 4.5 mu A and an intrinsic responsivity of 560.1 mA center dot W-1 at 3 V. Additionally, it has an internal quantum efficiency of 32.3%, and the measured 3 dB bandwidth is 17.5 GHz. This integrated photodetector fulfills the requirements of various critical applications in optical communication, microwave photonics, sensing, and imaging.
High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure

Xuanzhang Li,Junyang Zhang,Chen Yue,Xiansheng Tang,Zhendong Gao,Yang Jiang,Chunhua Du,Zhen Deng,Haiqiang Jia,Wenxin Wang,Hong Chen

DOI: https://doi.org/10.1038/s41598-022-11946-7

IF: 4.6

2022-05-11

Scientific Reports

Abstract:Mechanically flexible optoelectronic devices and systems can enable a much broader range of applications than what their rigid counterparts can do, especially for novel bio-integrated optoelectronic systems, flexible consumer electronics and wearable sensors. Inorganic semiconductor could be a good candidate for the flexible PD when it can keep its high performance under the bending condition. Here, we demonstrate a III–V material-based flexible photodetector operating wavelength from 640 to 1700 nm with the high detectivity of 5.18 × 10 11 cm‧Hz 1/2 /W and fast response speed @1550 nm by using a simply top-to-down fabrication process. The optoelectrical performances are stable as the PDs are exposed to bending cycles with a radius of 15 mm up to 1000 times. Furthermore, the mechanical failure mode of the PD is also investigated, which suggests that the cracking and delamination failure mode are dominant in bending up and bending down direction, respectively. Such a flexible III–V material-based PD and design with stable and high performance could be a promising strategy for the application of the flexible broad spectrum detection.

multidisciplinary sciences
Au-nanoparticles-decorated Sb2S3 nanowire-based flexible ultraviolet/visible photodetectors

Kai Zhang,Tao Luo,Haoran Chen,Zheng Lou,Guozhen Shen

DOI: https://doi.org/10.1039/c7tc00696a

IF: 6.4

2017-01-01

Journal of Materials Chemistry C

Abstract:One-dimensional semiconductor nanostructures are excellent candidates for high-performance photodetectors due to their unique physical properties: large surface area and high-density surface-dangling bonds and surface states. We fabricated flexible ultraviolet/visible photodetectors with Au-nanoparticlesdecorated Sb2S3 nanowires. As-fabricated flexible devices exhibited excellent photoresponse properties, including high responsivity (59.5 A W-1) and specific detectivity (4.29 x 10(10) Jones) as well as good stability and reproducibility. The greatly improved photoresponse properties of Au-nanoparticles-decorated Sb2S3 nanowires were caused by the formation of Schottky junctions between Au nanoparticles and Sb2S3 nanowires, which enhanced the spatial electron-hole separation effect. The method used here may be extended to other metal nanoparticles-decorated semiconductor nanowires, and as-fabricated flexible devices may find application in next-generation flexible optoelectronic devices.
Low-Dimensional Nanostructure Based Flexible Photodetectors: Device Configuration, Functional Design, Integration, and Applications

La Li,Chuqiao Hu,Guozhen Shen

DOI: https://doi.org/10.1021/accountsmr.1c00170

2021-01-01

Accounts of Materials Research

Abstract:A flexible photodetector that extends unique capabilities such as deformation, adaptivity to a soft surface, mechanical stability, and high photoresponsivity compared to the rigid devices has come to prominence in telecommunication, remote sensing, medical diagnostics, image sensing, optical communication, and the biomimetic human visual system. Low-dimensional nanomaterials consisting of one-dimensional (1D) nanowires (NWs), 2D nanoplates, and heterojunctions such as quantum dot modified NWs, hierarchical 1D hybrid nanomaterials, 1D/2D composites, 2D/2D heterostructures, etc. are considered as promising photosensitive materials in designing a flexible photodetector owing to the large surface to volume ratio and mechanical suppleness along the growth direction of the 1D NWs, excellent mechanical strength, superior structural stability, fast electron mobility, and low power dissipation of 2D nanoplates, and the synergistic effect of the heterojunctions. Account, we present our recent progress on low-dimensional nanostructure based flexible photodetectors. First, the three components, including the soft substrate, conductive electrodes, and representative low-dimensional nanomaterials (1D NWs, 2D nanoplates, and various types of heterojunctions) required for achieving flexible photodetector are summarized. Then, the design strategies toward functional photodetectors are presented in terms of their flexibility, stretchability, transparency, and photodetector with tunable photoresponse properties. The integration concepts of the photodetector with flexible energy storage to realize independent detectivity and the field effect transistor to amplify the responsivity are also provided. Furthermore, the application examples of the flexible photodetector in the artificial visual memory system and the biomimetic eye are reviewed. Finally, we discuss the future prospects of the low-dimensional nanostructure based flexible photodetector in the field of flexible image sensing and integrated electronics.
High-performance Flexible Broadband Photodetectors Enabled by 2D Ta2NiSe5 Nanosheets

Tingting Guo,Zixu Sa,Pengfei Wei,Yuxuan Jian,Xiang Chen,Zhesheng Chen,Jose Avila,Pavel Dudin,Zai-xing Yang,Xiufeng Song,Fengjing Liu,Shengli Zhang

DOI: https://doi.org/10.1088/2053-1583/acb1c3

IF: 6.861

2023-01-01

2D Materials

Abstract:Flexible broadband optoelectronic devices play a prominent role in the areas of daily life including wearable optoelectronic systems, health care, and bio-imaging systems. Two-dimensional (2D) narrow-bandgap materials with atomic thickness, adjustable bandgap, mechanical flexibility, as well as excellent optical and electrical properties exhibit great potential for applications in flexible optoelectronic devices. Here, we demonstrate a high-performance photodetector based on high-quality ternary Ta2NiSe5 nanosheets with a narrow bandgap of 0.25 eV. The photodetectors exhibit broadband photodetection capability in the visible-infrared (IR) spectrum (405-2200 nm) at room temperature. The maximum values of responsivity can reach up to 280 A W-1 at the wavelength of 405 nm. Meanwhile, the high responsivity of 63.9 A W-1 and detectivity of 3.8 x 10(9) Jones are achieved at the wavelength of 2200 nm, respectively. In addition, the obtained Ta2NiSe5-based photodetector shows excellent flexibility and the photodetection performance is almost insignificantly degraded after 1000 bending cycles. These results indicate that the 2D Ta2NiSe5 semiconductor has great potential in future wearable IR optoelectronic devices.
Highly flexible self-powered photodetectors based on core-shell Sb/CdS nanowires

Ruiqing Chai,Zheng Lou,Guozhen Shen

DOI: https://doi.org/10.1039/c8tc06383d

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:Flexible photodetectors have great applications in flexible image sensors, wearable electronics and smart robots. In this study, we reported the fabrication of highly flexible self-powered photodetectors with core-shell Sb/CdS nanowires as the sensing materials. The fabricated device exhibited a high I-on/I-off ratio of 3.54 x 10(3) under zero bias, fast speed of photoresponse and great stability. An open circuit voltage of 0.35 V was generated due to the presence of CdS and CdSb interfaces within the core-shell nanowires. Moreover, the photocurrent of the flexible device was nearly invariable at various bending angles and even after thousands of bending cycles, demonstrating its excellent flexibility and bending stability. The results indicate that the self-powered photodetectors are promising candidates for future passive optoelectronic devices.
CdS-Nanowires Flexible Photo-detector with Ag-Nanowires Electrode Based on Non-transfer Process

Yanli Pei,Ruihan Pei,Xiaoci Liang,Yuhao Wang,Ling Liu,Haibiao Chen,Jun Liang

DOI: https://doi.org/10.1038/srep21551

IF: 4.6

2016-01-01

Scientific Reports

Abstract:In this study, UV-visible flexible resistivity-type photo-detectors were demonstrated with CdS-nanowires (NWs) percolation network channel and Ag-NWs percolation network electrode. The devices were fabricated on Mixed Cellulose Esters (MCE) membrane using a lithographic filtration method combined with a facile non-transfer process. The photo-detectors demonstrated strong adhesion, fast response time, fast decay time, and high photo sensitivity. The high performance could be attributed to the high quality single crystalline CdS-NWs, encapsulation of NWs in MCE matrix and excellent interconnection of the NWs. Furthermore, the sensing performance was maintained even the device was bent at an angle of 90°. This research may pave the way for the facile fabrication of flexible photo-detectors with high performances.
Flexible Ultraviolet Photodetectors with Broad Photoresponse Based on Branched ZnS‐ZnO Heterostructure Nanofilms

Wei Tian,Chao Zhang,Tianyou Zhai,Song-Lin Li,Xi Wang,Jiangwei Liu,Xiao Jie,Dequan Liu,Meiyong Liao,Yasuo Koide,Dmitri Golberg,Yoshio Bando

DOI: https://doi.org/10.1002/adma.201305457

IF: 29.4

2014-01-01

Advanced Materials

Abstract:The application of nanofilm networks made of branched ZnS-ZnO nanostructures as a flexible UV photodetector is demonstrated. The fabricated devices show excellent operational characteristics: tunable spectral selectivity, widerange photoresponse, fast response speed, and excellent environmental stability.
Highly-Bendable MoS2/SnS Flexible Photodetector with Broadband Infrared Response

Hao Yu,Ying Xie,Jiahui Wei,Peiqing Zhang,Zhiying Cui

DOI: https://doi.org/10.1002/admi.202200896

IF: 5.4

2022-01-01

Advanced Materials Interfaces

Abstract:Flexible electronics is one of the hotspots of interdisciplinary research and can promote disruptive technology for post-Moore applications in the field of biomedical, electronic skin, wearable devices, etc. 2D materials have triggered great interest in flexible electronic devices since they have tunable bandgaps, excellent mechanical flexibility, good chemical stability, and outstanding optical properties. Their reducible atomic thickness greatly facilitates the design and construct for bending, crimping, and folding, whereas it comes at the expense of superior optoelectronic properties. Herein, a highly-bendable flexible photodetector based on MoS2/SnS amorphous blended film is fabricated with a broadband response from 473 to 1550 nm. The responsivity at 808 nm is 1128 times larger than that of intrinsic MoS2 photodetector accompanied by a four-fold acceleration in response time. It can bear a small bending radius as low as 3 mm for over 2000 bending-flatting cycles without a drastic performance decay. Moreover, it shows an ultrastrong stability in photoresponse exposed to air for 200 days. This work provides a promising candidate for high performance flexible photodetectors and opens up the prospect of 2D bulk blended materials in a facile all-in-one strategy for multifunctional flexible optoelectronics devices and systems.
High-Performance Flexible GaAs Nanofilm UV Photodetectors

Zhi-Xiang Zhang,Tuomas Haggren,Jia-Xiang Li,Jiang Wang,Qun-Ling Fang,Hark Hoe Tan,Lin-Bao Luo

DOI: https://doi.org/10.1021/acsanm.3c01875

IF: 6.14

2023-05-25

ACS Applied Nano Materials

Abstract:Flexible ultraviolet (UV) photodetectors have attracted extensive research interest due to their potential applications in personal UV monitoring, UV electronic eye, anti-UV gloves, and other wearable systems. In this study, we present a highly sensitive flexible UV photodetector based on an ultrathin GaAs layer that is produced using a metal–organic chemical vapor deposition method and epitaxial lift-off film transfer technology. Device performance analysis reveals that the photodetectors made of a 50 nm thick GaAs layer have excellent sensitivity to 365 nm light. Specifically, the responsivity, specific detectivity, and external quantum efficiency could reach as high as 99.01 A W–1, 1.51 × 1012 Jones, and 3.37 × 104%, respectively, at −2 V bias voltage, which are comparable to many UV photodetectors made from conventional wide band gap semiconductors. Such outstanding UV response properties are related to the very high absorption coefficient for UV light and carrier mobility of an ultrathin GaAs film. Equally importantly, the mechanical flexibility resulting from reducing the film thickness allows the device to maintain its photoelectric properties even after more than 500 bending cycles. The totality of these results suggests that our flexible UV photodetectors have strong potential applications in future wearable devices.

materials science, multidisciplinary,nanoscience & nanotechnology
Ultrahigh-Performance Self-Powered Flexible Double-Twisted Fibrous Broadband Perovskite Photodetector.

Haoxuan Sun,Wei Tian,Fengren Cao,Jie Xiong,Liang Li

DOI: https://doi.org/10.1002/adma.201706986

IF: 29.4

2018-01-01

Advanced Materials

Abstract:Self-powered flexible photodetectors without an external power source can meet the demands of next-generation portable and wearable nanodevices; however, the performance is far from satisfactory becuase of the limited match of flexible substrates and light-sensitive materials with proper energy levels. Herein, a novel self-powered flexible fiber-shaped photodetector based on double-twisted perovskite-TiO2 -carbon fiber and CuO-Cu2 O-Cu wire is designed and fabricated. The device shows an ultrahigh detectivity of 2.15 × 1013 Jones under the illumination of 800 nm light at zero bias. CuO-Cu2 O electron block bilayer extends response range of perovskite from 850 to 1050 nm and suppresses dark current down to 10-11 A. The fast response speed of less than 200 ms is nearly invariable after dozens of cycles of bending at the extremely 90 bending angle, demonstrating excellent flexibility and bending stability. These parameters are comparable and even better than reported flexible and even rigid photodetectors. The present results suggest a promising strategy to design photodetectors with integrated function of self-power, flexibility, and broadband response.
Hierarchical CdS Nanowires Based Rigid and Flexible Photodetectors with Ultrahigh Sensitivity.

Ludong Li,Zheng Lou,Guozhen Shen

DOI: https://doi.org/10.1021/acsami.5b06070

IF: 9.5

2015-01-01

ACS Applied Materials & Interfaces

Abstract:Hierarchical CdS nanowires were synthesized via a facile vapor transport method, which were used to fabricate both rigid and flexible visible-light photodetectors. Studies found that the rigid photodetectors on SiO2/Si substrate showed ultrahigh photo-dark current ratio up to 1.96 × 10(4), several orders of magnitude higher than previously reported CdS nanostructures, as well as high specific detectivity (4.27 × 10(12) Jones), fast response speed and excellent environmental stability. Highly flexible photodetectors were also fabricated on polyimide substrate, which exhibited comparable photoresponse performance as the rigid one. In addition, the as-prepared flexible devices displayed excellent mechanical flexibility, electrical stability and folding endurance. The results indicate that the hierarchical CdS nanowires may be good candidates for nanoscale optoelectronic devices such as high-efficiency photoswitches and highly photosensitive detectors.

Flexible Waveguide-Integrated Photodetectors

High-performance Flexible Waveguide-Integrated Photodetectors

Strain-Engineering-Driven Photomechanical–Photoelectric Coupled Flexible Photodetector Based on Hexagonal Silicon Nanowire Films

Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Flexible InGaAs Photodetector With High-Speed Detection and Long-Term Stability

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

(Invited) Mechanically Flexible Integrated Photonic Systems for Sensing and Communications

Flexible Organic-Inorganic Hybrid Photodetectors with N-Type Phenyl-C61-butyric Acid Methyl Ester (PCBM) and P-Type Pearl-Like GaP Nanowires

Ultracompact On-Chip Long-Wave Photodetector Based On Hybrid Plasmonic Waveguides

High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure

Au-nanoparticles-decorated Sb2S3 nanowire-based flexible ultraviolet/visible photodetectors

Low-Dimensional Nanostructure Based Flexible Photodetectors: Device Configuration, Functional Design, Integration, and Applications

High-performance Flexible Broadband Photodetectors Enabled by 2D Ta2NiSe5 Nanosheets

Highly flexible self-powered photodetectors based on core-shell Sb/CdS nanowires

CdS-Nanowires Flexible Photo-detector with Ag-Nanowires Electrode Based on Non-transfer Process

Flexible Ultraviolet Photodetectors with Broad Photoresponse Based on Branched ZnS‐ZnO Heterostructure Nanofilms

Highly-Bendable MoS2/SnS Flexible Photodetector with Broadband Infrared Response

High-Performance Flexible GaAs Nanofilm UV Photodetectors

Ultrahigh-Performance Self-Powered Flexible Double-Twisted Fibrous Broadband Perovskite Photodetector.

Hierarchical CdS Nanowires Based Rigid and Flexible Photodetectors with Ultrahigh Sensitivity.