Conductivity and Dielectric Loss of Tungsten-Bronze-Type Band2ti4o12 Microwave Ceramics
Xia Hai-Ting,Kuang Xiao-Jun,Wang Chun-Hai,Li Wen-Xian,Jing Xi-Ping,Zhao Fei,Yue Zhen-Xing
DOI: https://doi.org/10.3866/pku.whxb20110839
2011-01-01
Acta Physico-Chimica Sinica
Abstract:Tungsten-bronze type titanate BaNd2Ti4O12 ceramics were synthesized by solid state reactions. The conductivity and microwave dielectric loss of the samples that were thermally treated under various conditions and Ta-doped were investigated by electrochemical impedance measurement and microwave dielectric resonator measurement. The variation in conductivity with annealing atmospheres of air, O-2, and N-2 was consistent with the defect equilibriums 2O(o)(x)<-> 2V(o)(center dot center dot) + O-2 up arrow + 2e' and Ti-Ti(x)+e'<-> Ti'(Ti), suggesting n-type conductance for BaNd2Ti4O12. Thermal treatment in air/O-2 was found to favor the elimination of the native defects V-o(x), Ti'(Ti) and weakly bound electrons thus decreasing the conductivity. Thermal treatment in a N-2 atmosphere, which had a low oxygen partial pressure, increased the defect content and the conductivity. Thermal treatment in air/O-2/N-2 did not clearly affect the microwave dielectric loss, suggesting that native defects have negligible effects on this property. The air-annealed sample was found to have lower conductivity and lower microwave loss compared with the air-quenched sample. The change in conductivity was found to be related to the equilibrium of the native defects but the change in microwave dielectric loss might be explained by the release of thermally induced lattice strain. Ta doping reduced the conductivity but increased the microwave dielectric loss. This work shows that air-annealing may be an efficient way to improve the Qxf factor for BaNd2Ti4O12 ceramics, which was enhanced by similar to 12%.