Abstract:Direct reduction of metal oxides into a few transition metal dichalcogenide (TMDCs) monolayers has been recently explored as an alternative method for large area and uniform deposition. However, not many studies have addressed the characteristics and requirement of the metal oxides into TMDCs by the selenization/sulfurization processes, yielding a wide range of outstanding properties to poor electrical characteristics with nonuniform films. The large difference implies that the process is yet not fully understood. In particular, the selenization/sulfurization at low temperature leads to poor crystallinity films with poor electrical performance, hindering its practical development. A common approach to improve the quality of the selenized/sulfurized films is by further increasing the process temperature, thus requiring additional transfer in order to explore the electrical properties. Here, we show that by finely tuning the quality of the predeposited oxide the selenization/sulfurization temperature can be largely decreased, avoiding major substrate damage and allowing direct device fabrication. The direct relationship between the role of selecting different metal oxides prepared by e-beam evaporation and reactive sputtering and their oxygen deficiency/vacancy leading to quality influence of TMDCs was investigated in detail. Because of its outstanding physical properties, the formation of tungsten diselenide (WSe2) from the reduction of tungsten oxide (WO x) was chosen as a model for proof of concept. By optimizing the process parameters and the selection of metal oxides, layered WSe2 films with controlled atomic thickness can be demonstrated. Interestingly, the domain size and electrical properties of the layered WSe2 films are highly affected by the quality of the metal oxides, for which the layered WSe2 film with small domains exhibits a metallic behavior and the layered WSe2 films with larger domains provides clear semiconducting behavior. Finally, an 8'' wafer scale-layered WSe2 film was demonstrated, giving a step forward in the development of 2D TMDC electronics in the industry.

Photo-induced Exfoliation of Monolayer Transition Metal Dichalcogenide Semiconductors

Fast Photoresponse from 1T Tin Diselenide Atomic Layers

Spontaneous Exciton Dissociation in Transition Metal Dichalcogenide Monolayers

Engineering the Edges of MoS2 (WS2) Crystals for Direct Exfoliation into Monolayers in Polar Micromolecular Solvents

Thickness Tunable Wedding-Cake-like MoS2 Flakes for High-Performance Optoelectronics

Enhanced Photoluminescence of Solution-Exfoliated Transition Metal Dichalcogenides by Laser Etching

Metallo‐Hydrogel‐Assisted Synthesis and Direct Writing of Transition Metal Dichalcogenides

Photoconductivity Enhancement in Atomically Thin Molybdenum Disulfide through Local Doping from Confined Water

Laser Annealing Towards High-Performance Monolayer MoS2 and WSe2 Field Effect Transistors.

Electrochemically Exfoliating MoS 2 into Atomically Thin Planar‐Stacking Through a Selective Lateral Reaction Pathway

Transition metal dichalcogenide metaphotonic and self-coupled polaritonic platform grown by chemical vapor deposition

A Real-Time Raman Spectroscopy Study of the Dynamics of Laser-Thinning of MoS2 Flakes to Monolayers

Patterned Growth of Transition Metal Dichalcogenide Monolayers and Multilayers for Electronic and Optoelectronic Device Applications

Selection Role of Metal Oxides into Transition Metal Dichalcogenide Monolayers by a Direct Selenization Process

In Situ Ultrafast and Patterned Growth of Transition Metal Dichalcogenides from Inkjet‐Printed Aqueous Precursors

Exciton Radiative Recombination Dynamics and Nonradiative Energy Transfer in Two-Dimensional Transition-Metal Dichalcogenides

High-Throughput Identification and Statistical Analysis of Atomically Thin Semiconductors

Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study

Momentum resolved ground/excited states and the ultra-fast excited state dynamics of monolayer MoS2

Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition