Time- and Strain-Dependent Nanoscale Structural Degradation in Phase Change Epitaxial Strontium Ferrite Films

Le Wang,Zhenzhong Yang,Jinpeng Wu,Mark E. Bowden,Wanli Yang,Amy Qiao,Yingge Du

DOI: https://doi.org/10.1038/s41529-020-0120-3

2020-01-01

npj Materials Degradation

Abstract:Topotactic phase transition between metallic, perovskite SrFeO 3 and insulating, Brownmillerite SrFeO 2.5 has been extensively studied due to the potential applications in resistive switching devices for neuromorphic computing. However, its practical utilization as memristors has been hindered by the structural instability of SrFeO 3 , which is often ascribed to the generation of oxygen vacancies to form SrFeO 3-δ . Here we reveal that the dominating defects generated in SrFeO 3 epitaxial thin films are atomic scale gaps generated as a result of interfacial strain. Our correlated time- and strain-dependent measurements show that tensile strained SrFeO 3 films form vertical, nanoscale gaps that are SrO-rich, which are accountable for the observed metal-to-insulator transition over time. On the other hand, compressively strained or small lattice mismatched SrFeO 3 films mainly yield horizontal gaps with a smaller impact on the in-plane transport. The atomic scale origin of such defects and their impact on device performance need to be further understood in order to integrate phase change materials in oxide electronics.