Abstract:Valley is a quantum number defined for energetically degenerate but nonequivalent structures in energy bands of a crystalline material. Recent discoveries of two-dimensional (2D) layered materials have shed light on the potential use of this degree of freedom for information carriers because the valley can now be potentially manipulated in integrated 2D architectures. The valleys separated by a long distance in a momentum space are robust against external disturbance and the flow of the valley, the valley current, is nondissipative because it carries no net electronic current. Among the various 2D valley materials, graphene has by far the highest crystal quality, leading to an extremely long valley relaxation length in the bulk. In this review, we first describe the theoretical background of the valley Hall effect, which converts an electric field into a valley current. We then describe the first observation of the valley Hall effect in monolayer MoS2. Finally, we describe experiments on the generation and detection of the pure valley current in monolayer and bilayer graphene, achieved recently using the valley Hall effect and inverse valley Hall effect. While we show unambiguous evidence of a pure valley current flowing in graphene, we emphasize that the field of “valleytronics” is still in its infancy and that further theoretical and experimental investigations are necessary.

Generation of Pure Bulk Valley Current in Graphene.

Generation Of A Fully Valley-Polarized Current In Bulk Graphene

Quantum Pumping Of Valley Current In Strain Engineered Graphene

Valley Caloritronics and Its Realization by Graphene Nanoribbons

Pure Valley Current Generation in Graphene with A Dirac Gap by Quantum Pumping

Manipulation of valley isospins in strained graphene for valleytronics

Controllable Valley Polarization Using Graphene Multiple Topological Line Defects

Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene

All-electrical valley filtering in graphene systems (I): A path to integrated electro-valleytronics

Current splitting and valley polarization in elastically deformed graphene

Mechanical control over valley magnetotransport in strained graphene

Single-Valley Engineering in Graphene Superlattices

Strain-Modulated Perfect Valley Precession and Valley Transistor in Graphene

Easy-to-configure zero-dimensional valley-chiral modes in a graphene point junction

Valley current generation using biased bilayer graphene dots

Valley-Dependent Beams Controlled By Pseudomagnetic Field In Distorted Photonic Graphene

Valley Hall Effect in Two-Dimensional Hexagonal Lattices

Light-induced valleytronics in pristine graphene

Valley Supercurrent in the Kekulé Graphene Superlattice Heterojunction

Gate-tunable valley currents, non-local resistances and valley accumulation in bilayer graphene nanostructures