A Simplified Model of Write Amplification for Solid State Drives Adopting Page-Level Address Translation Mechanism

Wei-Neng Wang,Zong-Chao Wang,Kai Ni,Yi Zhao,Jian-She Ma,Long-Fa Pan
DOI: https://doi.org/10.4028/www.scientific.net/amr.383-390.2156
2011-01-01
Advanced Materials Research
Abstract:Due to its advantages, such as shock resistance, low power consumption, and so on, solid state drives are considered as a next generation storage device. And write amplification is a very import system parameter for evaluating performance. To simplify the analytical model of write amplification for solid state drives adopting page-level address translation mechanism, this paper proposes a probability model. Furthermore, numerical results based on our proposed probability model are also obtained. This paper can pose as a guideline for a first-order estimation of the write amplification for parameter ranges in solid state drives taking page mapping scheme.
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