The Comparison Of Current Ratio I-On/I-Off And Mobility Between Sige Substrate And Gaas Substrate In0.23ga0.77as Channel Mosfets

Xiangting Kong,Renrong Liang,Xuliang Zhou,Shiyan Li,Mengqi Wang,Honggang Liu,Jing Wang,Wei Wang,Jiaoqing Pan

DOI: https://doi.org/10.1109/TED.2016.2581983

IF: 3.1

2016-01-01

IEEE Transactions on Electron Devices

Abstract:This paper mainly describes the comparison of ION//OFF ratio and mobility between SiGe substrate and GaAs substrate In0.23Ga0.77As channel MOSFETs grown by metal organic chemical vapor deposition. In order to make the comparison more reasonable, we choose the same size (L-g = 10 gm) for both the SiGe substrate and GaAs substrate MOSFETs. As for the SiGe substrate MOSFETs, its highest ON-current to the lowest oFF-current (/oxiioFF) ratio is less than 1 x 103, while that of GaAs substrate MOSFETs are up to 4 x 104 (both at a gate bias of 3 V). Due to the Ge diffusion into the InGaAs channel, it will make the intrinsic channel become an n -type doped semiconductor and then influence the pinchoff characteristics. The maximum effective mobility of SiGe substrate MOSFETs is 1800 cm(2)N . s and that of GaAs substrate MOSFETs is up to 2090 cm(2)/V . s. The main reason for the higher mobility of GaAs substrate MOSFETs is maybe due to its smaller density interface trap density Dit and undoped InGaAs channel. Through comparing the performance, particularly the ION/TOFF ratio and mobility between SiGe substrate and GaAs substrate MOSFETs, we aim to find out some feasible methods to improve the performance of InGaAs channel MOSFETs on SiGe substrate.