Abstract:Molecular dynamics simulations using Tersoff potential were performed in order to study the evolution of the atomic packing structures, loading states on the atoms, and tensile tests, as well as the thermal properties of Si/Ge core–shell nanowires with different core–shell structures and ratios at different temperatures. Potential energy and pair distribution functions indicate the structural features of these nanowires at different temperatures. During uniaxial tensile testing along the wire axis at different temperatures, different stages including elasticity, plasticity, necking, and fractures are characterized through stress–strain curves, and Young’s modulus, as well as tensile strength, are obtained. The packing patterns and Lode–Nadai parameters reveal the deformation evolution and different distributions of loading states at different strains and temperatures. The simulation results indicate that as the temperature increases, elasticity during the stretching process becomes less apparent. Young’s modulus of the Si/Ge core–shell nanowires at room temperature show differences with changing core–shell ratios. In addition, the Lode–Nadai parameters and atomic level pressures show the differences of these atoms under compression or tension. Temperature and strain significantly affects the pressure distribution in these nanowires. The phonon density of states, when varying the composition and strain, suggest different vibration modes at room temperature. The heat capacities of these nanowires were also determined.

Atomistic Simulations of the Tensile and Melting Behavior of Silicon Nanowires

Molecular Dynamics Simulations of the Tensile and Melting Behaviours of Silicon Nanowires

Atomic Simulation of the Melting and Mechanical Behaviors of Silicon Nanowires

Tensile Properties of Si Nanowires with Faulted Stacking Layers

Molecular dynamics simulation on the buckling behavior of silicon nanowires under uniaxial compression

Mechanical properties of Si nanowires as revealed by in situ transmission electron microscopy and molecular dynamics simulations.

Atomistic Simulations Of The Mechanical Properties Of Silicon Carbide Nanowires

Atomistic simulations of bauschinger effect on silicon nanowire

Molecular dynamics simulations of the mechanical properties of crystalline/amorphous silicon core/shell nanowires

Atomic Simulations of Si@Ge and Ge@Si Nanowires for Mechanical and Thermal Properties

Mechanical Behaviors of MoS Nanowires under Tension from Molecular Dynamics Simulations

On the large-strain plasticity of silicon nanowires: Effects of axial orientation and surface

Molecular Dynamics Simulation of the Stretching Process of Silicon Nano-Rods

Investigating thermal stability, mechanical and thermal properties for Si/Ge core-shell nanowires at atomic scale

Size-Dependent Mechanical Properties of Amorphous SiO<sub>2</sub> Nanowires: A Molecular Dynamics Study

Size-Dependent Mechanical Properties of Amorphous SiO2 Nanowires: A Molecular Dynamics Study

Molecular Dynamics Simulations on the Melting and Tension Characteristics of C,SiC and BN Nanotubes

Shape Effects on the Yield Stress and Deformation of Silicon Nanowires: A Molecular Dynamics Simulation

Low-temperature in situ large-strain plasticity of silicon nanowires

Strain Rate-Dependent Tensile Response of Glassy Silicon Nanowires Studied by Accelerated Atomistic Simulations

In situ nano-thermo-mechanical experiment reveals brittle to ductile transition in silicon nanowires.