Effects Of Gamma-Ray Irradiation On Structure And Properties Of Zno: Al Thin Film

Wenwen Wang,Tianmin Wang
DOI: https://doi.org/10.4028/www.scientific.net/MSF.546-549.2137
2007-01-01
Abstract:ZnO:Al(ZAO) thin film is a kind of transparent conductive functional material which has a potential application in the solar cell and Atom Oxygen resisting systems of spacecrafts. High performance ZAO thin films were prepared by reactive magnetron sputtering and then irradiated by gamma-ray with different dose or rate of irradiation. The as-deposited sample and irradiated ones were characterized by X-ray Diffraction, Scanning Electron Microscopy and Hall-effect measurement to investigate the dependences of the structure, morphology and electrical proper-ties of ZAO on the dose and rate of gamma-ray irradiation. Measurement of Positron Annihilation Doppler-Broadening Spectroscopy was carried out to study the variation of the defects in ZAO thin films before and after irradiation. It is indicated that gamma-ray will excite the carriers, which are electrons in ZAO. A high rate of gamma-ray irradiation could slightly destroy the bonds of Zn-O and decrease the crystallinity, while the effect of low rate irradiation is similar to heat annealing and increase the crystallinity of ZAO thin films. gamma-ray has no apparent influences on the negative vacancy defects in ZAO thin film.
What problem does this paper attempt to address?