Enhanced NiOx Hole Transport Layer Via Graphene Assisted Annealing for Perovskite Solar Cell

Hong Zhong,Zhujing Zhan,Xiyuan Liu,Hengda Qiu,Hang Zhou
DOI: https://doi.org/10.1117/12.2585347
2020-01-01
Abstract:Nonstoichiometric nickel oxide (NiOx) hole transport layer (HTL) plays an important role in realizing high efficient and hysteresis-free perovskite solar cells (PSCs). Here, we report a precursor additive approach for forming high-quality solution processed NiOx interlayer. A small quantity of reduced graphene oxide (rGO) is added to the conventional NiOx precursor. It is found that the modified precursor lead to an improved hole extraction efficiency and uniformity of the NiOx thin film. Statistically, compared to non-modified NiOx precursor, perovskite solar cells based on NiOx:rGO precursor have higher short-circuit current densities (Jsc) and higher fill factors (FF).
What problem does this paper attempt to address?