Abstract:Influence of the width and Al composition of one well in asymmetric Al0.85Ga0.15N/GaN double quantum wells (DQWs) on the absorption coefficients and the wavelengths of the intersubband transitions (ISBTs) has been investigated by solving the Schrodinger and Poisson equations self-consistently. When the well width is chosen to be 1.91 nm, the three-energy-level DQWs are realized. The ISBT between the first odd order and the second even order subbands (the 1(odd)-2(even) ISBT) has comparable absorption coefficient with the 1(odd)-2(odd) ISBT. Their wavelengths are located at 1.3 and 1.54 mu m, respectively. When the well width is 2.77 nm, the four-energy-level DQWs are realized. The 1(odd)-2(even) and the 1(even)-2(odd) ISBTs have comparable absorption coefficients. Their wavelengths are located at 1.41 and 2.54 mu m, respectively. The energy separation between the excited subbands is determined to have the minimum value of 144 meV due to the band anticrossing interaction. The calculated results give possible application to ultrafast two-color optoelectronic devices operating within the optical communication wavelength range. (c) 2007 American Institute of Physics.

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