LDPC Joint Decoding Scheme for STT MRAM Storage

Jinghua Liu,Pingping Chen
DOI: https://doi.org/10.1109/tmrc53175.2021.9605125
2021-01-01
Abstract:Thanks to its superior feature of non-volatility, fast read/write speed, high endurance, and low power consumption, spin-torque transfer magnetic random access memory(STT-MRAM) has become a promising non-volatile memory (NVMs) technology that is suitable for many application. An STT-MRAM cell consists of magnetic tunneling junction(MTJ) as the data storage element and an nMOS transistor as the access control device. But, due to the physical characteristics of MTJ, the smallest storage unit of STT-MRAM, the write error transition probabilities differ by several orders of magnitude. Due to the asymmetric channel of write errors, the maximum error transition probability is of the order of 10-4. Therefore, to flip these small data bits correctly, dynamic slient-variable-node-free scheduling (D-SVNFS) is used to correct these variable nodes quickly. However, due to the greedy nature of D-SVNFS, D-SVNFS may flip the corrected data bits again. To solve the increase of decoding error rate caused by the greedy nature of D-SVNFS, D-SVNFS and RBI-MSD (reliablity-based iterative min-sum decoding) decoding algorithms are combined by a joint method. After D-SVNFS corrects the error data bits, switch to RBI-MSD to further correct and verify the codes. Simulation results show that joint decoding has better error correction ability than RBI-MSD for LDPC code error caused by unexpected bit reversal in the STT-MRAM channel.
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