Flexible GaN microwire-based piezotronic sensory memory device

Qilin Hua,Junlu Sun,Haitao Liu,Xiao Cui,Keyu Ji,Wenbin Guo,Caofeng Pan,Weiguo Hu,Zhong Lin Wang
DOI: https://doi.org/10.1016/j.nanoen.2020.105312
IF: 17.6
2020-12-01
Nano Energy
Abstract:<p>Skin-inspired electronic devices that can store and retain impressions of sensory information after the removal of external stimuli are showing great significance for artificial sensory systems. Here, a single GaN microwire-based piezotronic sensory memory device (SMD) is presented to sense and memorize the impressions of tactile information. The SMD is capable to be programmed into a high resistance state by inputting external strain, and reversibly erased back to the low resistance state with an electrical voltage. Due to the piezotronic effect, the piezo-potential induced by compressive strain would cause the dissolution/redistribution of conductive channels of nitrogen vacancies in the bamboo-shaped GaN microwire. Furthermore, the SMD array demonstrates a distinct spatial mapping of external strain sensing and retaining with the operations of strain program and electrical erase. The single micro/nanowire-based sensory memory device will have great applications in the field of tactile sensation, touchable haptic technologies, and bio-realistic artificial intelligence systems.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
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