Remarkable Black-Phase Robustness of CsPbI3 Nanocrystals Sealed in Solid SiO2 /alox Sub-Micron Particles.

Yue Lin,Xiaotong Fan,Xiao Yang,Xi Zheng,Weizhi Huang,Zhibin Shangguan,Yuhan Wang,Hao-Chung Kuo,Tingzhu Wu,Zhong Chen

DOI: https://doi.org/10.1002/smll.202103510

IF: 13.3

2021-01-01

Small

Abstract:This work combines the high-temperature sintering method and atomic layer deposition (ALD) technique, and yields SiO2/AlOx-sealed gamma-CsPbI3 nanocrystals (NCs). The black-phase CsPbI3 NCs, scattered and encapsulated firmly in solid SiO2 sub-micron particles, maintain in black phases against water soaking, ultraviolet irradiation, and heating, exhibiting remarkable phase stability. A new phase-transition route, from gamma via beta to alpha phase without transferring into delta phase, has been discovered upon temperature increasing. The phase stability is ascribed to the high pressure exerted by the rigid SiO2 encapsulations, and its condensed amorphous structures that prevent the permeation of H2O molecules. Nanoscale coating of Al2O3 thin films, which are deposited on the surface of the CsPbI3-SiO2 by ALD, enhances the protection against O-2 infiltration, greatly elevating the high-temperature stability of CsPbI3 NCs sealed inside, as the samples remain bright after 1-h annealing in air at 400 degrees C. These fabrication and encapsulation techniques effectively prevent the formation of delta-CsPbI3 under harsh environment, bringing the high-pressure preservation of black-phase CsPbI3 from laboratory to industry toward potential applications in both photovoltaic and fluorescent areas.