Multi-Resonance Deep-Red Emitters With Shallow Potential-Energy Surfaces To Surpass Energy-Gap Law

Yuewei Zhang,Dongdong Zhang,Tianyu Huang,Alexander J Gillett,Yang Liu,Deping Hu,Linsong Cui,Zhengyang Bin,Guomeng Li,Jinbei Wei,Lian Duan

DOI: https://doi.org/10.1002/anie.202107848

2021-01-01

Abstract:Efficient organic emitters in the deep-red region are rare due to the "energy gap law". Herein, multiple boron (B)- and nitrogen (N)-atoms embedded polycyclic heteroaromatics featuring hybridized pi-bonding/ non-bonding molecular orbitals are constructed, providing a way to overcome the above luminescent boundary. The introduction of B-phenyl-B and N-phenyl-N structures enhances the electronic coupling of those para-positioned atoms, forming restricted pi-bonds on the phenyl-core for delocalized excited states and thus a narrow energy gap. The mutually ortho-positioned B- and N-atoms also induce a multi-resonance effect on the peripheral skeleton for the non-bonding orbitals, creating shallow potential energy surfaces to eliminate the high-frequency vibrational quenching. The corresponding deep-red emitters with peaks at 662 and 692 nm exhibit narrow full-width at half-maximums of 38 nm, high radiative decay rates of ca. 10(8) s(-1), approximate to 100 % photo-luminescence quantum yields and record-high maximum external quantum efficiencies of ca. 28 % in a normal planar organic light-emitting diode structure, simultaneously.