Recent advances in stretchable field-effect transistors

Xiumei Wang,Yaqian Liu,Qizhen Chen,Yujie Yan,Zhichao Rao,Zhixian Lin,Huipeng Chen,Tailiang Guo

DOI: https://doi.org/10.1039/d1tc01082d

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:Stretchable field-effect transistors (s-FETs), an indispensable component in stretchable electronics, have emerged as a noteworthy technology in academia and industry due to their broad application prospects, especially in wearable electronics, implantable electronics and skin-like electronics. Currently, significant efforts have been devoted to fabricating high-performance s-FETs, and remarkable advances in their material, structural, and processing techniques and applications have been achieved. Here, we summarize the recent progress in the fabrication of high-performance s-FETs achieved by developing advanced stretchable channel materials, structural designs and processing techniques. Moreover, the applications of s-FETs in stretchable electronics, such as stretchable sensors, stretchable memory transistors and stretchable artificial neurologically devices, are discussed. Beyond discussing recent key work in this field, the current challenges and prospective directions of s-FETs in stretchable electronics are also discussed. This review presents a detailed overview of the recent progress in s-FET fabrication and applications, which provides a guideline for the further development of s-FETs with high stretchability and electrical performance in the near future.