Abstract:: Despite signi ﬁ cant advances in double-crystalline coil − coil block copolymers (BCPs), investigations into double-crystalline all-conjugated rod − rod BCPs have been comparatively fewer and are limited in scope. Moreover, the ability to control the crystalline structures of all-conjugated BCPs may endow the materials and devices with enhanced optoelectronic properties over the two respective constituents. Herein, we report the synthesis of a series of poly(3-hexylthiophene)- block -poly(3-butylselenophene) (P3HT- b -P3BS) BCPs with tunable block ratios and investigate the e ﬀ ects of block ratio and thermal annealing process on their crystallization and microphase-separated structures. These rod − rod BCPs exhibit a sole P3HT crystallization (P3HT/P3BS = 63:37) or individual P3HT and P3BS crystallization (P3HT/P3BS = 55:45 and 42:58) in as-cast thin ﬁ lms, in ﬂ uenced by the block ratio of P3HT/P3BS. Interestingly, upon 200 ° C-annealing (i.e., annealed at the temperature below the melting points of P3HT and P3BS form I blocks), P3HT- b -P3BS (P3HT/P3BS = 63:37) remains the sole P3HT crystallization, while P3HT- b -P3BS (P3HT/ P3BS = 55:45 and 42:58) transforms from two individual P3HT and P3BS crystal domains into cocrystals, accompanied by the phase transition of P3BS block from form II to I. Remarkably, after a higher thermal annealing at 230 ° C (i.e., close to the melting point of P3HT block yet below the melting point of P3BS form I block), the cocrystalline structures originally existing in P3HT- b P3BS (P3HT/P3BS = 55:45 and 42:58) at the 200 ° C-annealing process do not form, and they reverse back to individual P3HT and P3BS form I crystals. Finally, the relationship between various structures of P3HT- b -P3BS and the resulting charge mobilities is clari ﬁ ed. This study provides an insight into the interplay between microphase separation of P3HT- b -P3BS and crystallization of both P3HT and P3BS blocks tailored by the block ratio and thermal annealing temperature and correlates their di ﬀ erent structures with the charge transport properties. high-resolution pattern. Di ﬀ erential scanning calorimetry (DSC) was measured using a TA DSC Q2000 at a heating rate of 10 ° C/min under N 2 ﬂ ow. UV − vis absorption spectra were recorded on PerkinElmer Lambda 750 UV − vis spectropho-tometers. Cyclic Voltammetry (CV) curves were obtained using a CHI 660 Electrochemical Analyzer with a degassed acetonitrile solution of tetrabutylammonium hexa ﬂ uorophosphate (Bu 4 NPF 6 , 0.1 M). Atomic force microscopy (AFM) images were obtained using a Bruker Dimension FastScan in the tapping mode. The samples for AFM measurement were prepared by spin-coating the polymer solutions (10 mg/mL) on silicon wafers at 2000 r/min for 20 s. The charge transport properties of OFETs were measured using a Keithley 4200-SCS in an argon- ﬁ lled glovebox.

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