Artificial nerve synapse transistor based on graphene/carbon nanotube composite absorbing layer

Wang Fengqiu,Qin Shuchao,Liu Yujie,Xu Yongbing,Zhang Rong
2017-01-01
Abstract:The invention discloses an artificial nerve synapse transistor based on graphene/carbon nanotube composite absorbing layer. The artificial nerve synapse transistor comprises a substrate, a gate dielectric layer and the graphene/carbon nanotube composite absorbing layer, wherein the substrate, the gate dielectric layer and the graphene/carbon nanotube composite absorbing layer are successively arranged from bottom to top. The graphene/carbon nanotube composite absorbing layer comprises at least one graphene layer and at least one carbon nanotube layer. Furthermore, at least one graphene layer contacts with the gate dielectric layer. Two ends of the graphene layer are respectively provided with a source electrode and a drain electrode. Furthermore the carbon nanotube layer does not contact with the source electrode and the drain electrode. The transistor is used as a basic unit of an optical neuron system. Array integration of a plurality of transistors is performed. The plurality of transistors are connected with external measurement equipment through a lead wire, thereby forming an intelligent optical neuron system. By means of advantages of distributed storage, parallel operation, adaptive learning and the like in the nerve system, image identification can be quickly and effectively performed. The invention further provides a solution for realizing information storage and image identification through the intelligent optical neuron system.
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