Abstract:Synthesis of device-quality GeSn materials with higher Sn compositions is hindered by various factors, such as Sn segregation, clustering, and short-range ordering effects. In the present work, the impact of the clustering of Sn atoms in a GeSn semiconductor alloy was studied by density functional theory using SG15 pseudopotentials in a Synopsys QuantumATK tool, where the thermodynamic stability, effective band structure, indirect and direct bandgaps, and density of states (DOS) were computed to highlight the difference between a cluster-free random GeSn alloy and a GeSn alloy with Sn–Sn clusters. A 54-atom bulk Ge1–xSnx (x = 3.71%–27.77%) supercell was constructed with cluster-free and a first nearest neighbor Sn–Sn clustered GeSn alloy at each composition for this work. Computation using the generalized gradient approximation exchange-correlation functional showed that the thermodynamic stability of GeSn was reduced due to the clustering of Sn, which increased the formation energy of the GeSn alloys by increasing the Hartree potential energy and exchange-correlation energy. Moreover, with the effective band structure of the GeSn material at a Sn composition of ∼22%, both direct (Eg,Γ) and indirect (Eg,L) bandgaps decreased by a large margin of 40.76 and 120.17 meV, respectively, due to Sn–Sn clustering. On the other hand, Eg,Γ and Eg,L decrease is limited to 0.5 and 12.8 meV, respectively, for Sn composition of ∼5.6%. Similar impacts were observed on DOS, in an independent computation without deducing from the electronic band structure, where the width of the forbidden band reduces due to the clustering of Sn atoms in GeSn. Moreover, using the energy bandgaps of GeSn computed with the assumption of it being a random alloy having well-dispersed Sn atoms needs revision by incorporating clustering to align with the experimentally determined bandgap. This necessitates incorporating the effect of Sn atoms clustered together at varying distributions based on experimental characterization techniques such as atom probe tomography or extended x-ray absorption fine structure to substantiate the energy bandgap of the GeSn alloy at a particular composition with precision. Hence, considering the effect of Sn clusters during material characterization, beginning with the accurate energy bandgap characterization of GeSn would help in mitigating the effect of process variations on the performance characteristics of GeSn-based group IV electronic and photonic devices such as varying leakage currents in transistors and photodiodes as well as the deviation from the targeted wavelength of operation in lasers and photodetectors.

Nature of the Local Environment of Germany Atoms in Amorphous Films (GeTe)x(Sb2Te3)

Local Structure of Amorphous (GeTe)x(Sb2Te3) Films

Role of tin clustering in band structure and thermodynamic stability of GeSn by atomistic modeling

Short range order and topology of Te-rich amorphous Ge-Sb-Te alloys

Te Antisite Incorporation in Zns1-Xtex Thin Films

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

An Investigation of the Local Environments of Tin in Tin-Doped Α-Fe2o3

Explosive crystallization of amorphous germanium-tin films by irradiation with a 3-keV electron beam

Non-substitutional single-atom defects in the Ge_(1-x)Sn_x alloy

Electro-Optical Characterization of an Amorphous Germanium-Tin (Ge1-XSnx) Microbolometer

The local structural differences in amorphous Ge-Sb-Te alloys

Effects of volumetric and potential energy change on indirect to direct bandgap transition of Ge/Sn alloy

Epitaxial Stabilisation of ${\bf \mathrm{Ge_{1-x}Sn_x}}$ Alloys

Atomic Order in Non-Equilibrium Silicon-Germanium-Tin Semiconductors

Strong Anharmonicity in Tin Monosulfide Evidenced by Local Distortion, High-Energy Optical Phonons, and Anharmonic Potential

The Amorphization and Crystallization of Ge 2 Sb 2 Te 5 : an Ab Initio Molecular Dynamics Study

Germanium‐antimony‐selenium‐tellurium thin films: Clusters formation by laser ablation and comparison with clusters from mixtures of elements

Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low temperature 125Te NMR

Electronic Structure and Magnetism of Ge(Sn)TMXTe1−X (TM = V, Cr, Mn): A First Principles Study

Substitutional incorporation of Sn in compressively strained thin films of heavily-alloyed Ge1???xSn x /Ge semiconductor probed by x-ray absorption and diffraction methods

Weak antilocalization and disorder-enhanced electron interactions in crystalline GeSbTe