Hierarchical WO3-x Ultrabroadband Absorbers and Photothermal Converters Grown from Femtosecond Laser-Induced Periodic Surface Structures.
Dongshi Zhang,Ruijie Liu,Sihan Ji,Yunyu Cai,Changhao Liang,Zhuguo Li
DOI: https://doi.org/10.1021/acsami.2c04523
IF: 9.5
2022-01-01
ACS Applied Materials & Interfaces
Abstract:Oxygen-vacancy-rich WO3-x absorbers are gaining increasing attention because of their extensive absorbance-based applications in near-infrared shielding, photocatalysis, sterilization, interfacial evaporator and electrochromic, photochromic, and photothermal fields. Thermal treatment in an oxygen-deficient atmosphere enables us to prepare WO3-x but lacks the capacity for finely manipulating the grown structures. In this work, we present that laser-induced periodic surface structure (LIPSS) obtained by femtosecond laser ablation is a good template to grow various hierarchical WO3-x ultrabroadband absorbers and photothermal converters by thermal oxidation annealing in air. Increasing annealing temperature from 600 to 1000 degrees C allows the manipulation of WO3-x crystal sizes from similar to 70 nm to similar to 4 mu m, accompanied by a color transition from brown to dark blue and finally to yellow. Benefiting from annealing-induced surface cracks and phase transition into WO3-x (containing both WO3 and W18O49) at 600 degrees C, excellent UV-vis-NIR-MIR ultrabroadband absorbers were produced: >90% UV-NIR absorbance (0.3-2.5 mu m) and 50-90% MIR absorbance (2.5-16 mu m), much better than most W-based metamaterial absorbers. The higher the annealing temperature (1000 > 800 > 600 degrees C), the better the photothermal performances (sample temperature as the indicator) of annealed interfaces due to the increased oxidation rates and resultant thicker oxide layers (6, 150, and 507 mu m), a trend which is more apparent upon the irradiation of high-density (3160 mW/cm(2)) and ultrabroadband (200-2500 nm) light but much less apparent for shorter-band (200-800, 420-800, 800-2500 nm, etc.) and less-intensity (1694, 1540, 1460 mW/cm(2), etc.) light irradiation. This phenomenon indicates that (1) higher-performance ultrabroadband absorbers possess a higher photothermal conversion capacity; (2) thicker-WO3-x oxide layer converters are more effective in preserving photothermal heat; and (3) both the W-LIPSS and metal tungsten substrate can quickly dissipate the photothermal heat to inhibit heat accumulation in the oxide photothermal converters. It is also proved that ablation-induced high-pressure shockwaves can produce deformation layers in the subsurfaces to release annealing-induced stresses, beneficial for the formation of less-cracked non-stoichiometric WO3-x interfaces upon annealing. High-pressure shockwaves are also capable of inducing grain refinement of LIPSS, which facilitates a homogeneous growth of small non-stoichiometric metal-oxide crystals upon annealing. Our results indicate that femtosecond laser ablation is a convenient upstream template-fabrication technique compatible with the thermal oxidation annealing method to develop advanced functional oxygen-vacancy metal-oxide interfaces.