P-GaN-substrate Sprouted Giant Pure Negative Electrocaloric Effect in Mn-doped Pb(Zr0.3Ti0.7)O3 Thin Film with a Super-Broad Operational Temperature Range

Biaolin Peng,Tingting Wang,Laijun Liu,Xue Chen,Jingfeng Li,Qi Zhang,Rusen Yang,Wenhong Sun,Zhong Lin Wang
DOI: https://doi.org/10.1016/j.nanoen.2021.106059
IF: 17.6
2021-01-01
Nano Energy
Abstract:Ferroelectric thin films simultaneously possessing large positive and negative electrocaloric (EC) effects are attractive to the solid-state temperature-controlled devices which can be used in many fields, such as modern electronics, communications, medical and military, etc. Here, it is demonstrated that the giant positive EC effect (oTmax - 44.5 K and oSmax - - 42.8 JK-1 kg-1 at - 313 K) of the Mn-doped Pb(Zr0.3Ti0.7)O3 (PZT-Mn) thin film deposited by a sol-gel method on the Pt/TiOx/SiO2/Si can be tailored into a pure negative EC effect (oTmax - - 23.5 K and oSmax - 16.3 JK-1 kg- 1) with a recorded super-broad operational temperature range (- 150 K) by directly depositing on the p-GaN-substrate that has a high carrier concentration (n = 4 x 1017). Under the sprouting of the p-GaN-substrate, an electric-field induced structural phase transition (nano-scaled tetragonal phase to rhombohedral phase) plays a key role in obtaining the recorded pure negative EC effect. It is concluded that direct deposition of ferroelectric thin film on the p-GaN-substrate can be used as a universal-simple-effective strategy to generate a pure negative EC effect in a broad operational temperature range (>= 100 K).
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