Maximizing the Formation of Reactive Oxygen Species for Deep Oxidation of NO via Manipulating the Oxygen-Vacancy Defect Position on (BiO) 2 CO 3
Fei Rao,Gangqiang Zhu,Weibin Zhang,Yunhua Xu,Baowei Cao,Xianjin Shi,Jianzhi Gao,Yuhong Huang,Yu Huang,Mirabbos Hojamberdiev
DOI: https://doi.org/10.1021/acscatal.1c01251
IF: 12.9
2021-06-11
ACS Catalysis
Abstract:Constructing oxygen vacancies (OVs) in metal-oxide semiconductors is an effective and simple way to enhance the photocatalytic performance via promoting the utilization of solar light and boosting the formation of surface reactive oxygen species (ROS). The presence of different oxygen atoms in the same crystal structure can possibly lead to the formation of different types of OVs with distinct physicochemical and optoelectronic properties. Particularly, the two different crystallographic positions of oxygen atoms in the [BiO]<sub>2</sub><sup>2+</sup> layer of (BiO)<sub>2</sub>CO<sub>3</sub> (BOC) allow the construction of two types of OVs (OVs1 and OVs2). In this work, OVs1-BOC and OVs2-BOC are synthesized via introducing the OVs1 and OVs2 on the surface of the BOC. The influence of OVs1 and OVs2 on the generation of ROS in the BOC is demonstrated based on theoretical and experimental studies by analyzing the separation and redox potentials of photogenerated charge carriers, absorption surface adsorbates (H<sub>2</sub>O and O<sub>2</sub>), and reaction active energy. The photocatalytic performance is evaluated by photo-oxidative nitric oxide (NO) removal efficiency under visible light irradiation. The OVs1-BOC and OVs2-BOC exhibit 50.0 and 41.6% photo-oxidative NO removal efficiencies, while generating 15.6 and 16.54 ppb NO<sub>2</sub>, respectively. The in situ Fourier transform infrared spectroscopy and estimated NO conversion pathway reveal the photo-oxidative NO removal mechanism and suppression of NO<sub>2</sub> formation on the surfaces of OVs1-BOC and OVs2-BOC. This work demonstrates a straightforward approach for enhancing the photo-oxidative NO removal via manipulating the OV defect position in semiconductors.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acscatal.1c01251?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acscatal.1c01251</a>.Experimental methods for evaluating the photocatalytic activity, including photo-oxidative NO removal experiments, trapping experiments and in situ FTIR measurement, and DFT calculations. The band structures, XRD patterns, XPS spectra, element mapping images, adsorption energy and differential charge distribution of O<sub>2</sub> and H<sub>2</sub>O over the photocatalyst surface, electrochemical tests, corresponding fitting results of <i>ns</i>-level time-resolved fluorescence spectra, calculated reaction pathways and activation energies (<i>E</i><sub>a</sub>) for the generation and transformation of the ROS, photostability tests, trapping experiments, calculated reaction pathways, and activation energies (<i>E</i><sub>a</sub>) for ROS-assisted NO<sub>x</sub> conversion on the BOC (<a class="ext-link" href="/doi/suppl/10.1021/acscatal.1c01251/suppl_file/cs1c01251_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
chemistry, physical