An In-Memory-Computing Charge-Domain Ternary CNN Classifier

Xiangxing Yang,Keren Zhu,Xiyuan Tang,Meizhi Wang,Mingtao Zhan,Nanshu Lui,Jaydeep P. Kulkarni,David Z. Pan,Yongpan Liu,Nan Sun
DOI: https://doi.org/10.1109/cicc51472.2021.9431398
IF: 5.4
2023-01-01
IEEE Journal of Solid-State Circuits
Abstract:The article presents a charge-domain computing ternary neural network (TNN) classifier with a complete four-layer neural network (NN) on a chip. The proposed ternary network provides 1.5-b resolution (0/+1/−1) for weights and activations, leading to 3.9× fewer operations (OPs) per inference than binary neural network (BNN) for the same Modified National Institute of Standards and Technology (MNIST) accuracy. The 1.5-b multiply-and-accumulate (MAC) is implemented by $V_{\text {CM}}$ -based capacitor switching scheme, which inherently benefits from the reduced signal swing on the capacitive digital-to-analog converter (CDAC). Also, the $V_{\text {CM}}$ -based MAC introduces sparsity during training, resulting in a lower switching rate. The prototype is fabricated in a 40-nm LP CMOS process with an active area of 0.98 mm2, operates at 549 frames/s (FPS), and consumes 96 $\mu \text{W}$ . With all OPs on the chip, it achieves 97.1% MNIST accuracy with 0.18 $\mu \text{J}$ per classification, which is the smallest to our knowledge for comparable MNIST classification accuracy.
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