CO2 Activation and Capture on a Si-Doped H-Bn Sheet: Insight into the Local Bonding Effect of Single Si Sites

Lei Fang,Zexing Cao
DOI: https://doi.org/10.1021/acs.jpcc.0c10080
2021-01-01
Abstract:Inert CO2 is only physically adsorbed on the surface of h-BN and graphene two-dimensional (2D) materials. However, a Si-doped h-BN sheet is able to capture CO2 directly through chemisorption under mild conditions. Herein, first-principles calculations and ab initio molecular dynamics (AIMD) simulations have been performed to explore the interaction between CO2 and the Si-doped h-BN sheet, and CO2 activation and chemisorption at the SiN3 site are predicted to be exothermic (-0.22 eV) and almost barrier free (0.03 eV). Such high activity of the single Si site toward CO2 activation strongly depends on its local bonding environment, and there are only weak van der Waals interactions between CO2 and SiB3 and SiC3 units of Si-doped h-BN and graphene sheets. The present calculations reveal that the Si=pz dangling bond dominates the Si-CO2 bonding interaction in CO2 chemisorption on the Si-doped h-BN sheet, and facile activation and capture of CO2 require the low-energy pz band of Si.
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