Isosymmetric Phase Transitions, Ultrahigh Ductility, and Topological Nodal Lines in Α−ag2s

Yongcheng Liang,Azkar Saeed Ahmad,Jianzhou Zhao,Guozhu Song,Xuefeng Zhou,Jialin Ji,Wei Zhang,Zhilin Han,Jixuan Liu,Kenny Stahl,Anna Pakhomova,Konstantin Glazyrin,Guo-Jun Zhang,Wenqing Zhang,Yusheng Zhao,Rui Yu,Shanmin Wang,Peihong Zhang
DOI: https://doi.org/10.1103/physrevb.102.140101
IF: 3.7
2020-01-01
Physical Review B
Abstract:We report two reversible pressure-induced isosymmetric phase transitions in a-Ag 2 S that are accompanied by two compressive anomalies at 7.5 and 16 GPa, respectively. The first transition arises from a sudden and drastic puckering of the wrinkled Ag-S layers, which leads to an anomalous structural softening at high pressure and gives rise to the ultrahigh compressive ductility in alpha-Ag2S. The second transition stems from a pressure-driven electronic state crossover from a conventional semiconductor to a topological metal. The band-crossing points near the Fermi energy form a nodal-line structure due to the preservation of the time-reversal and space-inversion symmetries under pressure. Our findings not only reveal the underlying mechanism responsible for the ultrahigh ductility in this class of inorganic semiconductors, but also provide a distinctive member to the growing family of topological metals and semimetals.
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