Abstract:With the rapid development of wireless communications, GaN HEMTs, which have various advantages of high power density, high electron mobility, and high breakdown threshold, have attracted increasing attention. Microwave power amplifiers based on GaN HEMTs are widely used in many fields, such as communication, medical, and detection instruments. In the accurate design of GaN microwave power amplifiers, reliable RF large signal models are vitally important. In this paper, a scalable large-signal model based on EEHEMT model is proposed to describe the properties of multifinger AlGaN/GaN high electrom mobility transistors (HEMTs) accurately. A series of scaling rules are established for the intrinsic parameters of the device, including drain-source current I ds , input capacitance C gs and C gd , which take into account both the gate width of a single finger and the number of gate fingers. With the proposed scalable large-signal model, the performances of the L-band GaN high-efficiency power amplifier with the length of gate of 14.4mm is analyzed. This amplifier demonstrates outstanding performance with the output power up to 46.5dBm and the drain efficiency of over 70% covering the entire frequency range from 1120MHz to 1340MHz. Great agreement between the simulations and experiments is achieved, demonstrating the excellent accuracy of the proposed model. Moreover, the proposed model can further predict the performance of high-order harmonics, providing an effective tool for the design of advanced high-power and high-efficiency microwave power amplifiers. Certainly, the EEHEMT model lacks the ability to characterize the dynamical behavior induced by trap and self-heating effects. Thus, for further consideration, scaling models for the thermal resistance and heat capacity will be investigated to broaden the applicability of the proposed model in the case of continuous waves.

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A Compact Gate-Width Scalable Model for Dual-Gate GaAs Phemt

A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs

Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances

A large signal scaling model of high power GaN microwave device

Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures

A Surface Potential Large Signal Model for AlGaN/GaN HEMTs

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V f max ·V BK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

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Modeling of Novel RF AlGaN/GaN HEMTs with the Structure of N-Si Drain Extension

An 1-4;nhanced AlGaN/GaN HEMTs Large-Signal Model with Parameter Fxtraction Methodology

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Mm-Wave Performance of 50nm T-Gate AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistors with Ft of 200 GHz

A New Empirical I-V Model for AlGaN/GaN HEMT Devices

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Self-consistent numerical model and optimization of two-dimensional electron gases for AlGaN/GaN HEMT

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An ASM-Based Semiempirical Model for AlGaN/GaN Power HEMTs with P-Gan Gate

A New Small-Signal Modeling and Extraction Method in AlGaN/GaN HEMTs

A novel small-signal equivalent circuit model for GaN HEMTs incorporating a dual-field-plate

An improved small‐signal model for GaN HEMTs devices