Surface‐Emitting Lasers: Multiwavelength GaN‐Based Surface‐Emitting Lasers and Their Design Principles (Ann. Phys. 1/2020)

Guoen Weng,Shaoqiang Chen,Yang Mei,Yuejun Liu,Hidefumi Akiyama,Xiaobo Hu,Jianping Liu,Baoping Zhang,Junhao Chu

DOI: https://doi.org/10.1002/ANDP.202070010

2020-01-01

Annalen der Physik

Abstract:In article number 1900308, Shaoqiang Chen and co-workers propose a controllable multiwavelength GaN-based vertical-cavity surface-emitting laser using asymmetric quantum well or multistacked size-varied quantum dot active regions. The components and intensity of the multi-laser outputs are demonstrated to be continuously adjustable. The analysis reveals that the electron–photon interaction, carrier tunneling, and photon reabsorption play a crucial role in the multiwavelength lasing processes. The design principles of the proposed active regions are also elaborated upon to provide guidelines for high performance multiwavelength emissions in GaN-based surface-emitting lasers.