Abstract:The accumulation and extrusion of Ca2+ ions in the pre- and post-synaptic terminals play crucial roles in initiating short- and long-term plasticity (STP and LTP) in biological synapses, respectively. Mimicking these synaptic behaviors by electronic devices represents a vital step towards realization of neuromorphic computing. However, the majority of reported synaptic devices usually focus on the emulation of qualitatively synaptic behaviors, devices that can truly emulate the physical behavior of the synaptic Ca2+ ions dynamics in STP and LTP are rarely reported. In this work, Ag/Ag:Ta2O5/Pt self-doping memristors were developed to equivalently emulate the Ca2+ ions dynamics of biological synapses. With conductive filaments from double sources, these memristors produced unique double switching behavior under voltage sweeps and demonstrated several essential synaptic behaviors under pulse stimuli, including STP, LTP, STP to LTP transition and spike-rate-dependent plasticity (SRDP). Experimental results and nanoparticle dynamic simulations both showed that Ag atoms from double sources could mimic Ca2+ dynamics in the pre- and post-synaptic terminals under stimuli. A perceptron network with an STP to LTP transition layer based on the self-doping memristors was also introduced and evaluated; simulations showed that this network could solve noisy figure recognition tasks efficiently. All of these results indicate that the self-doping memristors are promising components for future hardware creation of neuromorphic systems and emulate the characteristics of the brain.

An Artificial Electrical-Chemical Mixed Synapse Based on Ion-Gated MoS2 Nanosheets for Real-Time Facilitation Index Tuning

An Artificial Electrical-Chemical Mixed Synapse Based on Ion-Gated MoS 2 Nanosheets for Real-Time Facilitation Index Tuning

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Full imitation of synaptic metaplasticity based on memristor devices.

Floating-gate Photosensitive Synaptic Transistors with Tunable Functions for Neuromorphic Computing

Flexible electronic synapse enabled by ferroelectric field effect transistor for robust neuromorphic computing

Organic Heterojunction Memristors with Enhanced Tunable Resistive States for Artificial Synapses

Control of Synaptic Plasticity Learning of Ferroelectric Tunnel Memristor by Nanoscale Interface Engineering

Memristor with Ag‐Cluster‐Doped TiO2 Films As Artificial Synapse for Neuroinspired Computing

Low‐Power, Electrochemically Tunable Graphene Synapses for Neuromorphic Computing

Artificial Synapse Based on van der Waals Heterostructures with Tunable Synaptic Functions for Neuromorphic Computing

Nanochannel-based transport in an interfacial memristor can emulate the analog weight modulation of synapses.

Enhanced Memristive Performance Via a Vertically Heterointerface in Nanocomposite Thin Films for Artificial Synapses.

Engineering the Synaptic Kinetic Process into Memristive Device

Artificial Synapse Based on Bio‐Hierarchical Porous Memristor Driven by Multilevel‐Ions Migration