Large second-order susceptibility from a quantized indium tin oxide monolayer
Yiyun Zhang,Bingtao Gao,Dominic Lepage,Yuanbiao Tong,Pan Wang,Wendi Xia,Junru Niu,Yiming Feng,Hongsheng Chen,Haoliang Qian
DOI: https://doi.org/10.1038/s41565-023-01574-1
IF: 38.3
2024-01-03
Nature Nanotechnology
Abstract:Due to their high optical transparency and electrical conductivity, indium tin oxide thin films are a promising material for photonic circuit design and applications. However, their weak optical nonlinearity has been a substantial barrier to nonlinear signal processing applications. In this study, we show that an atomically thin (~1.5 nm) indium tin oxide film in the form of an air/indium tin oxide/SiO 2 quantum well exhibits a second-order susceptibility χ 2 of ~1,800 pm V –1 . First-principles calculations and quantum electrostatic modelling point to an electronic interband transition resonance in the asymmetric potential energy of the quantum well as the reason for this large χ 2 value. As the χ 2 value is more than 20 times higher than that of the traditional nonlinear LiNbO 3 crystal, our indium tin oxide quantum well design can be an important step towards nonlinear photonic circuit applications.
materials science, multidisciplinary,nanoscience & nanotechnology