Abstract:Bi 2 Te 3 based alloys have been the most widely used thermoelectric material at low temperature for many decades. Here we report Se doped n-type Mg 3 Bi 2 based materials with a thermoelectric figure-of-merit ZT of 0.82 at 300 K and a peak ZT of 1.24 at 498 K, which is comparable to the n-type Bi 2 Te 3 and Te doped Mg 3 Bi 1.4 Sb 0.6 . The improved thermoelectric performance is benefited from the high carrier concentration and mobility as well as the thermal conductivity reduction. The reduced resistivity increased the power factor at all measured temperatures, leading to a higher engineering ZT(ZT eng ) and engineering power factor(PF eng ) for n-type Mg 3 Bi 2 . The n-type Mg 3 Bi 1.4 Sb 0.6 materials are promising for thermoelectric power generation and cooling applications near room temperature.

High Thermoelectric Performance at Room Temperature of N-Type Mg 3 Bi 2 -Based Materials by Se Doping