Abstract:Abstract The InAs/GaSb superlattice infrared detector has been developed with tremendous effort. However, the performance of it, especially long-wavelength infrared detectors (LWIR), is still limited by the electrical performance and optical quantum efficiency (QE). Forcing the active region to be p -type through proper doping can highly improve QE, and the gating technique can be employed to greatly enhance electrical performance. However, the saturation bias voltage is too high. Reducing the saturation bias voltage has broad prospects for the future application of gate voltage control devices. In this paper, we report that the gated P + – π –M–N + InAs/GaSb superlattice long-wavelength infrared detectors exhibit different π region doping levels that have a reduced minimum saturation bias at − 10 V with a 200-nm SiO 2 layer after a simple and effective anodic vulcanization pretreatment. The saturation gate bias voltage is much lower than − 40 V that reported with the same thickness of a 200-nm SiO 2 passivation layer and similar structure. The optical and electrical characterization indicates that the electrical and optical performance of the device would be weakened by excessive doping concentration. At 77 K, the 50% cutoff wavelength of the device is about 8 μm, the 100% cutoff wavelength is 10 μm, the maximum quantum efficiency is 62.4%, the maximum of responsivity is 2.26 A/W at 5 μm, and the maximum RA of the device is 1259.4 Ω cm 2 . Besides, the specific detectivity of Be 780 °C-doped detector without gate electrode exhibits a peak of 5.6 × 10 10 cm Hz 1/2 /W at 5 μm with a 70-mv reverse bias voltage, which is more than three times that of Be 820 °C-doped detector. Moreover, the peak specific detectivity could be further increased to 1.3 × 10 11 cm Hz 1/2 /W at 5 μm with a 10-mv reserve bias voltage that has the bias of − 10 V at the gate electrode.

Growth and Photo-Electronic Characteristics of Short/mid Wave Dual-Band Infrared Detectors Based on GaSb Bulk and InAs/GaSb Superlattices

High-performance InP-based bias-tunable near-infrared /extended-short wave infrared dual-band photodetectors

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Long-wavelength InAs/GaSb superlattice double heterojunction infrared detectors using InPSb/InAs superlattice hole barrier

High-Performance Midwave Type-II Superlattice Infrared Photodetectors With a Stepped InAs/GaSb Absorber

InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices

Long-Wavelength InAs/GaSb Superlattice Detectors With Low Dark Current Density Grown by MOCVD

Mid-wavelength high operating temperature barrier infrared detector and focal plane array

High-Performance Anodic Vulcanization-Pretreated Gated P+–π–M–N+ InAs/GaSb Superlattice Long-Wavelength Infrared Detector

InP-based GaAsSb/AlGaAsSb/T2SL barrier-type low-bias tunable dual-band NIR/eSWIR photodetectors

Long and Very Long Wavelength InAs/InAsSb Superlattice Complementary Barrier Infrared Detectors

Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices

Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array

High Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaSb Type-II Superlattice

Growth and characterization of InGaAs/InAsSb superlattices by metal-organic chemical vapor deposition for mid-wavelength infrared photodetectors

Long wavelength InAs/InAsSb superlattice barrier infrared detectors with p-type absorber quantum efficiency enhancement

Ge-based Mid-Infrared Blocked-Impurity-band Photodetectors

Short-period InAsSb-based strained layer superlattices for high quantum efficiency long-wave infrared detectors

Investigation of low frequency noise-current correlation for the InAs/GaSb type-II superlattice long-wavelength infrared detector