Abstract:The gasification of carbon with O2, CO2, and H2O oxidants plays an important role in several energy-based applications. As most of the industrial gasification processes are conducted under mixed-atmosphere conditions, the oxidation of carbon in binary oxidant mixtures becomes crucially important. Using reactive force-field (ReaxFF) potentials, extensive MD simulations were carried out on the oxidation behavior of graphene in mixed O2/H2O and O2/CO2 environments for a range of gas compositions and temperatures. A graphene sheet with a line defect comprising of eight and four-membered rings was used as the starting carbon structure. In addition to enhanced carbon gasification with oxygen additions, MD simulations showed synergistic interactions between different oxidants and their net influence on the overall reactivities. The gasification levels achieved under the binary system were higher than the linear combination of contributions from individual oxidants. The addition of ~40%O2 in the binary mix was identified as the region with the highest reactivity during the initial stages of gasification. The oxidation reactions with oxygen were found to start instantaneously in the presence of H2O or CO2 instead of the usual initial delay. A very fast reaction kinetics was also observed in the initial stages in the presence of oxygen. Our results show that the gasification reactions under H2O and CO2 started at lower temperatures than O2 thereby creating a partially oxidized structure. Due to the presence of a large number of activation sites, very high rates of gasification were achieved with oxygen. These findings could help identify optimal oxidant compositions towards maximizing carbon gasification and minimizing CO2 emissions.

Enhanced Chemical Reactions of Oxygen at Grain Boundaries in Polycrystalline Graphene

Strain Enhanced Defect Reactivity at Grain Boundaries in Polycrystalline Graphene

Diffusion and Desorption of Oxygen Atoms on Graphene

The role of oxygen in mechanochemical wear of graphene

Exploring Oxygen in Graphene Chemical Vapor Deposition Synthesis.

Defect-induced oxygen adsorption on graphene films

The role of defects in the etching of graphene by intercalated oxygen

Effect of Oxygen Plasma Treatment on the Structure and Mechanical Properties of Bilayer Graphene Studied by Molecular Dynamics Simulation

Domain formation on oxidized graphene

Oxygen reduction reactions on pure and nitrogen-doped graphene: a first-principles modeling

Charge transfer and weak bonding between molecular oxygen and graphene zigzag edges at low temperatures

Thermal behaviour during initial stages of graphene oxidation: Implications for reaction kinetics and mechanisms

A molecular understanding of the gas-phase reduction and doping of graphene oxide

Interactions of graphene with oxidants in a mixed atmosphere: synergistic effects of O2/H2O and O2/CO2 on gasification reactivity and kinetics

Atomic-scale characterization of defects in oxygen plasma-treated graphene by scanning tunneling microscopy

Ab initio prediction of charged species distribution at grain boundaries: Effects of structure and dopants

Unconventional Reaction Phase Diagram for the Penetration Etching/Growth of Graphene Adlayers

Facile Oxygen Intercalation Between Full Layer Graphene and Ru(0001) under Ambient Conditions

Adsorption of molecular oxygen on doped graphene: atomic, electronic and magnetic properties

Oxygen-Promoted Chemical Vapor Deposition of Graphene on Copper: A Combined Modeling and Experimental Study

Theoretical Investigations on the Growth of Graphene by Oxygen-Assisted Chemical Vapor Deposition