Experimental Research on Fabrication of Silicon Nitride Film Nanopore Device

Yuan Zhishan,Lin Kabin,Yang Haojie,Ji Anping,Sha Jingjie,Xie Xiao,Ni Zhonghua,Yi Hong,Chen Yunfei
DOI: https://doi.org/10.3969/j.issn.1001-0505.2016.05.013
2016-01-01
Abstract:Aiming at the requirements of the third generation gene sequence technique,a fabrication method for large scale silicon nitride (SiN)film nanopore device is presented.First,100 nm is cho-sen as the optimal thickness suitable for fabrication of nanopore through measuring the stress of SiN nanofilms with different thickness.High yield SiN nanofilm chips are manufactured by using low pressure chemical vapor deposition (LP-CVD),reactive ion etching (RIE)and release process. Then,focused ion beam (FIB )and high energy electron beam are used to manufacture SiN film nanopore on SiN nanofilm chips after process optimization.Relationships between FIB etching time, beam current and the diameter of nanopore are researched.The experimental results show that when the thickness of SiN is reduced to below 40 nm by FIB milling,the fabrication effect of nanopore is better.The minimum diameters of SiN film nanopore for FIB and electron beam are 26 and 3.5 nm, respectively.The proposed method provides strong support for DNA sequencing based on solid-state nanopore.
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