Advances in Semiconductor Lasers Based on Parity–Time Symmetry
Hongbo Sha,Yue Song,Yongyi Chen,Jishun Liu,Mengjie Shi,Zibo Wu,Hao Zhang,Li Qin,Lei Liang,Peng Jia,Cheng Qiu,Yuxin Lei,Yubing Wang,Yongqiang Ning,Guoqing Miao,Jinlong Zhang,Lijun Wang
DOI: https://doi.org/10.3390/nano14070571
IF: 5.3
2024-01-01
Nanomaterials
Abstract:Semiconductor lasers, characterized by their high efficiency, small size, low weight, rich wavelength options, and direct electrical drive, have found widespread application in many fields, including military defense, medical aesthetics, industrial processing, and aerospace. The mode characteristics of lasers directly affect their output performance, including output power, beam quality, and spectral linewidth. Therefore, semiconductor lasers with high output power and beam quality are at the forefront of international research in semiconductor laser science. The novel parity–time (PT) symmetry mode-control method provides the ability to selectively modulate longitudinal modes to improve the spectral characteristics of lasers. Recently, it has gathered much attention for transverse modulation, enabling the output of fundamental transverse modes and improving the beam quality of lasers. This study begins with the basic principles of PT symmetry and provides a detailed introduction to the technical solutions and recent developments in single-mode semiconductor lasers based on PT symmetry. We categorize the different modulation methods, analyze their structures, and highlight their performance characteristics. Finally, this paper summarizes the research progress in PT-symmetric lasers and provides prospects for future development.