Abstract:The photoluminescence (PL) quantum yield (QY) of CdSe nanocrystals during their growth under a given set of initial conditions increases monotonically to a certain maximum value and then decreases gradually. Such a maximum is denoted as a PL "bright point", which does not always overlap with the minimum point of the PL peak width for the same reaction. The experimental results suggest that the existence of the PL bright point is a general phenomenon during the growth of semiconductor nanocrystals and likely is a signature of an optimal surface structure/reconstruction of the nanocrystals grown under a given set of initial conditions. The position of the bright point, the highest PL QY, the types of the bright points (sharp or flat), the sharpness of the PL peak, etc., were all strongly dependent on the initial Cd:Se ratio of the precursors in the solution. A large excess of the selenium precursor, with 5-10 times more selenium precursor than the amount of the cadmium precursor, was found necessary to achieve a high PL QY value and a narrow emission profile. The existence of the PL bright point and the sensitive temporal variation of the PL QY during the growth of semiconductor nanocrystals can explain the unpredictable nature and poor reproducibility of the PL properties of the as-prepared semiconductor nanocrystals observed previously. Furthermore, the knowledge gained in this study enabled us to reproducibly synthesize highly luminescent CdSe nanocrystals through a relatively simple and safe synthetic scheme. In a traditionally weak emission window for CdSe nanocrystals, the orange-red optical window, the PL QY of the as-prepared CdSe nanocrystals reached as high as 85% at room temperature, and the full width at half-maximum of the corresponding PL peak was as narrow as 23 nm, about 65-80 meV depending on the emitting position. The PL properties of the as-prepared CdSe nanocrystals are stable upon aging for at least several months. These as-prepared nanocrystals represent a series of best emitters that are highly efficient, highly pure in emission color, stable, and continuously tunable by simply varying the size of the nanocrystals.

Growth of CdSe Crystal by Modified Horizontal Seed Vapor Phase Method

Growth Of High Quality Znse Single Crystal

Synthesis and Growth of Nonlinear Infrared Crystal Material CdSe Via Seeded Oriented Temperature Gradient Solution Zoning Method

Growth and Electro-Optical Characteristics of CdSe / GaAs Epilayers Prepared by Electron Beam Epitaxy

Vertical Bridgman seeded growth of Cd1-xZnxTe crystals

Controlled Growth of CdSe Tetrapod Nanocrystals

Single-Crystal CdSe Nanowires Prepared Via Vapor-Phase Growth Assisted with Silicon

Ultrafast growth of high-quality large-sized GaSe crystals by liquid metal promoter

Advancements in Iso-Diameter seeded growth of CdZnTe crystals: A numerical modeling approach and applications in liquid phase Epitaxy

Growth of SnSe Single Crystal Via Vertical Vapor Deposition Method and Characterization of Its Thermoelectric Performance

Ab initio investigation of the crystallization mechanism of cadmium selenide

Effect of Ligands and Growth Temperature on the Growth Kinetics and Crystal Size of Colloidal CdSe Nanocrystals

On-Surface Reactions in the Growth of High-Quality CdSe Nanocrystals in Nonpolar Solutions

Structural evolutions of CdSe nanocrystals in ripening process

Growth and Characterization of Single-Crystal ZnSe Nanorods Via Surfactant Soft-Template Method

Grain growth of CZTSSe via nanocrystal selenization

Formation of Semiconductor Cu2−xSe Rod-Like Crystals Through a Solvothermal Reaction

Control of Photoluminescence Properties of CdSe Nanocrystals in Growth.

Synthesis of Highly Emissive CdSe Quantum Dots by Aqueous Precipitation Method

Controllable in Situ Photo-Assisted Chemical Deposition of CdSe Quantum Dots on ZnO/CdS Nanorod Arrays and Its Photovoltaic Application.

Single Crystal CdSe X-ray Detectors with Ultra-High Sensitivity and Low Detection Limit