Researches on the Band Structure of Several Types of Manganese Oxides

LIU Fei-fei,LI Yan,DING Hong-rui,DING Cong,LU An-huai
DOI: https://doi.org/10.3969/j.issn.1007-2802.2017.03.011
2017-01-01
Abstract:Mn oxides are common semiconductor materials.In this work,based on the data obtained from X-ray diffrac-tion,Raman scattering,X-ray absorption and emission spectra and zeta potential measurements,we calculated the band structure of Hex-Birnessite,Mon-Birnessite,δ-MnO 2 and Cryptomelane.The experiment results indicated the bandgaps of these Mn oxides are 2.32 eV,1 .77 eV,1 .36 eV and 1 .23 eV,respectively.The calculated conduction band edges are-0.32 V,0.09 V,0.39 V,0.46 V,respectively,with valence band edges at pH =6 are 2.00 V,1 .86 V,1 .75 V, 1 .69 V,respectively.All of the four Mn oxides have higher potential than humic acid so that all Mn oxides can oxidize hu-mic acid at any pH values.Overall,the photocatalytic redox capability of layered Mn oxides were higher than that of tun-nel-structure Mn oxides.
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