The Magnetic Effects of Photocurrent and Photoluminescence in Exciplex-Based Devices

Ma CaiHong,Xu Jing,Pan RuiHeng,Wang Ying,Zhao Xi,Ye ShengNan,Zhu HongQiang,Xiong ZuHong
DOI: https://doi.org/10.1360/sspma-2019-0221
2019-01-01
Abstract:A series of exciplex-based devices with different doping concentrations, thicknesses and bandgaps have been fabricated in this paper, and their magneto-photocurrent (MPC) and magneto-photoluminescence (MPL) at different bias voltages and temperatures have been measured under 325 nm laser excitation. Experimental results show that although both MPC and MPL curves show the fingerprint-like line shape dominated by the intersystem crossing (ISC) process at various temperatures, their bias dependences are completely different. The value of MPC decreases with increasing the reverse bias, and increases first and then decreases with increasing the forward bias. But the value of MPL is independent on the applied bias. In addition, the value of MPC gradually decreases with increasing the concentration or thickness, but the value of MPL increases first and then decreases with increasing the concentration and is independent on thickness. What's more, the value of MPC for the exciplex-based devices with a small band gap is large. By analyzing the structure, spectra and energy level distribution of exciplex-based devices, we conclude that the change for the magnitude of MPC is determined by the dissociation, transport and ISC processes of exciton in the devices, and the amplitude of MPL is governed by the radiation and ISC processes of exciton at the interface. This work will provide a reference for understanding the microscopic mechanisms in the exciplex-based devices under photoexcitation.
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