Abstract:Among Fe-based superconductors, beta-FeSe has received a lot of attention from researchers because it has unique and complex physical properties under the simplest crystal structure. In this paper, FeSe films were prepared on CaF2, LiF, and SrTiO3 substrates by pulsed laser deposition (PLD) technique with the same growth parameters. The superconducting transition temperatures of the samples were tested at 11.44 K, 10.91 K, and 5.4 K, respectively, by applying electrodes on the surface of the films. We used X-ray diffraction (XRD) and atomic force microscopy (AFM) to obtain the crystal structure and roughness of the samples, respectively. Two phonons (A(1g), B-1g) of different samples were found in the Raman spectra, indicating that different strain effects were introduced by the substrates. In order to accurately reflect the properties of FeSe films, a dispersion model with Lorentz + Drude oscillations was established. The physical properties such as complex refractive index and scattering rate were analyzed by spectroscopic ellipsometry (SE) inversion. Meanwhile, we adopted the standard critical point (SCP) model to fit the second derivatives of the imaginary part of the dielectric function and calculate the transition energy. In combination with the first-principles calculation based on density functional theory (DFT), the physical origin of the transition peaks was obtained. On this basis, we propose a new method to acquire the FeSe pseudogap by making the difference between the two transition energies observed by SE. The experimental result indicates that pseudogap of FeSe film is negatively correlated with the superconducting transition temperature. This work can offer a new perspective for the prediction of the superconductivity of FeSe and a reference for the application of FeSe on different substrates.

Optoelectric properties of SnSe thin-film regulated using ferroelectric polarization substrate

Enhanced Thermoelectric Properties of SnSe Thin Films Grown by Pulsed Laser Glancing-Angle Deposition

Optical Property and Pseudogap Study of FeSe Thin Films on Different Substrates

Tuning the Band Gap and Polarization of BaSnO3/SrSnO3 Superlattices for Photovoltaic Applications.

Band Gaps, Effective Masses and Refractive Indices of Pbsrse Thin Films: Key Properties for Mid-Infrared Optoelectronic Device Applications

Modulation of monolayer SnSe 2 optoelectronic properties by applied electric field and atomic doping

Effect of Strain on the Lattice Vibrational Properties of PbSe

Anisotropic Nonlinear Optical Properties of a SnSe Flake and a Novel Perspective for the Application of All‐Optical Switching

Linear dichroism of the optical properties of SnS and SnSe van der Waals crystals

Intercorrelated Ferroelectricity and Bulk Photovoltaic Effect in Two-Dimensional Sn2P2S6 Semiconductor for Polarization-Sensitive Photodetection.

Electrically switchable anisotropic polariton propagation in a ferroelectric van der Waals semiconductor

In-Plane Anisotropies of Polarized Raman Response and Electrical Conductivity in Layered Tin Selenide

Enhancing Visible Light Absorption for Ferroelectric Sn2P2S6 by Se Anion Substitution

Interaction of polarization-sensitive surface photocurrents in semitransparent CuSe/Se film

Phase controllable synthesis of SnSe and SnSe2 films with tunable photoresponse properties

Reversible Photoluminescence Modulation of Monolayer MoS2 on a Ferroelectric Substrate by Light Irradiation and Thermal Annealing

Photoemission Study of the Electronic Structure of Valence Band Convergent SnSe

Extraordinary Polarization and Thickness Dependences of Photocarrier Dynamics in PdSe2 Ribbons

One-pot synthesis, sensitization and photoelectric performance of calcium doped PbSe thin films

Two-dimensional epitaxy of SnSe film on In2Se3 induced by intrinsic out-of-plane ferroelectricity

The role of vast off-stoichiometry of SnSe thin film on structural, morphological, optical, and electrical properties for photovoltaic applications