Photoluminescence Excitation Spectra Analysis of the Sub-structure in the Absorption Spectra of Semiconductor Quantum Dots

Bing-can LIU,Xue-qin PAN,Qiang TIAN
DOI: https://doi.org/10.3969/j.issn.1672-1497.2005.03.020
2005-01-01
Abstract:The sub-structure in the absorption spectra of semiconductor quantum dots (QDs) is analyzed by means of photoluminescence excitation spectra in this paper. The semiconductor CdSeS quantum dots imbedded in glass are analyzed by means of absorption spectra, PL spectra and PLE spectra. The absorption spectra show obvious quantum-size effect. There are two peaks in the PL spectra. At the lower energy peak of the absorption spectra where using PLE detect, there are two peaks can be found, and the energy space between them diminishes with the increase of radius of QDs. It can indicate that sub-structure exists about the lower energy peak of the absorption spectra. The lower energy peak of PL spectra is induced by the defect states of QDs. The PLE spectra that detect at the energy of the peak also can indicate that the relation of 1S3/2-1 se、 2S3/2-1 se and a higher energy state is the main cause of the defect state.
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