Abstract:A series of Y 1-x-y Al 3 -3z (BO 3 ) 4 : xDy 3 + , yGd 3 + and zGa 3 + single-phase phosphors were prepared by solid -phase technique. Subsequently, the samples were analyzed by Rietveld refinement, SEM, FT-IR and XPS to determine their phases, morphologies, and compositions. The results show that Dy 3 + , Gd 3 + and Ga 3 + were successfully doped in YAl 3 (BO 3 ) 4 and the prepared phase was very pure without changing the structure of the initial phase. The emission peaks of Y 1-x Al 3 (BO 3 ) 4 : xDy 3 + phosphor at lambda ex = 351 nm are 483 nm and 574 nm, which correspond to 4 F 9/2 -> 6 H 15/2 and 6 H 13/2 transitions, respectively. Afterwards, the local crystal field environment of Dy 3 + in the luminescence center was improved by replacing Y 3 + with Gd 3 + and Al 3 + with Ga 3 + , which enhanced the luminescence. At the peak at 574 nm, the doping of Gd 3 + increased 1.49 times and that of Ga 3 + increased 1.98 times. The internal quantum efficiencies of these two phosphors are as high as 67.23 % and 70.86 %, and the thermal stabilities are 86.7 % and 88.4 %, respectively. We discuss the mechanism of introducing Gd 3 + and Ga 3 + to produce luminescence enhancement from two aspects. On the one hand, the host activity was analyzed and explained by first -principles calculations combined with diffuse reflectance spectroscopy. On the other hand, dipole moments are introduced to control the local aberration parameters. Finally, 365 nm chip was used to package and test Y 0.94 Al 3 (BO 3 ) 4 : 0.03Dy 3 + , 0.03Gd 3 + and Y 0.97 Al 2.7 (BO 3 ) 4 : 0.03Dy 3 + , 0.1Ga 3 + phosphors. The color rendering indices of the samples was 67.4 and 68.1, respectively, and they emitted bright natural white light. The results indicate that the Y 0.94 Al 3 (BO 3 ) 4 : 0.03Dy 3 + , 0.03Gd 3 + and Y 0.97 Al 2.7 (BO 3 ) 4 : 0.03Dy 3 + , 0.1Ga 3 + single-phase phosphors have potential commercial value as W -led devices.

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