An 80dB Dynamic Range ∑△ Modulator for Low-IF GSM Receivers

Pei Yang,Xiumei Yin,Huazhong Yang
DOI: https://doi.org/10.3321/j.issn:0253-4177.2008.02.013
2008-01-01
Journal of Semiconductors
Abstract:A high-resolution,200kHz signal bandwidth,third-order single-loop single-bit ∑△ modulator used in low-IF GSM receivers is presented. The modulator is implemented with fully differential switched capacitor circuits in standard 0. 6μm 2P2M CMOS technology. The modulator uses two balanced reference voltages of + 1V,and is driven by a single 26MHz clock signal. The measurement results show that,with an oversampling ratio of 64, the modulator achieves an 80. 6dB dy-namic range,a 71.8dB peak SNDR, and a 73.9dB peak SNR in the signal bandwidth of 200kHz. The modulator dissipates 15mW static power from a single 5V supply.
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