Gate Tunable Supercurrent in Josephson Junctions Based on Bi2Te3 Topological Insulator Thin Films

Wei-Xiong Wu,Yang Feng,Yun-He Bai,Yu-Ying Jiang,Zong-Wei Gao,Yuan-Zhao Li,Jian-Li Luan,Heng-An Zhou,Wan-Jun Jiang,Xiao Feng,Jin-Song Zhang,Hao Zhang,Ke He,Xu-Cun Ma,Qi-Kun Xue,Ya-Yu Wang
DOI: https://doi.org/10.1088/0256-307x/38/3/037402
2021-01-01
Abstract:We report transport measurements on Josephson junctions consisting of Bi2Te3 topological insulator (TI) thin films contacted by superconducting Nb electrodes. For a device with junction length L = 134 nm, the critical supercurrent Ic can be modulated by an electrical gate which tunes the carrier type and density of the TI film. Ic can reach a minimum when the TI is near the charge neutrality regime with the Fermi energy lying close to the Dirac point of the surface state. In the p-type regime the Josephson current can be well described by a short ballistic junction model. In the n-type regime the junction is ballistic at 0.7K< T < 3.8K while for T < 0.7K the diffusive bulk modes emerge and contribute a larger Ic than the ballistic model. We attribute the lack of diffusive bulk modes in the p-type regime to the formation of p–n junctions. Our work provides new clues for search of Majorana zero mode in TI-based superconducting devices.
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