Abstract:In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered ${\delta}-$TaN/Co20Fe60B20 devices through spin-torque ferromagnetic resonance ST-FMR and spin pumping measurements. From the ST-FMR characterization we observed a significant linewidth modulation in the magnetic Co20Fe60B20 layer attributed to the charge-to-spin conversion generated from the ${\delta}-$TaN layer. Remarkably, the spin-torque efficiency determined from ST-FMR and spin pumping measurements is as large as ${\Theta} =$ 0.034 and 0.031, respectively. These values are over two times larger than for ${\alpha}-$Ta, but almost five times lower than for ${\beta}-$Ta, which can be attributed to the low room temperature electrical resistivity $\sim 74{\mu}{\Omega}$ cm in ${\delta}-$TaN. A large spin diffusion length of at least $\sim8$ nm is estimated, which is comparable to the spin diffusion length in pure Ta. Comprehensive experimental analysis, together with density functional theory calculations, indicates that the origin of the pronounced SOT effect in ${\delta}-$TaN can be mostly related to a significant contribution from the Berry curvature associated with the presence of a topically nontrivial electronic band structure in the vicinity of the Fermi level (EF). Through additional detailed theoretical analysis, we also found that an isostructural allotrope of the superconducting ${\delta}-$TaN phase, the simple hexagonal structure, ${\theta}-$TaN, has larger Berry curvature, and that, together with expected reasonable charge conductivity, it can also be a promising candidate for exploring a generation of spin-orbit torque magnetic random access memory as cheap, temperature stable, and highly efficient spin current sources.

Temperature Dependence of Spin-Orbit Torques in Nearly Compensated Tb21Co79 Films by a Topological Insulator Sb2Te3.

Temperature‐Dependent Spin–Orbit Torques in Perpendicular Magnetic [co/ni]n/tbco Composite Films

Temperature Dependence of Spin-Orbit Torque-Driven Magnetization Switching in in Situ Grown Bi2Te3/MnTe Heterostructures

Temperature dependence of spin—orbit torque-driven magnetization switching in in situ grown Bi 2 Te 3 /MnTe heterostructures

Room temperature spin-orbit torque switching induced by a topological insulator

Room temperature spin-orbit torque efficiency in sputtered low-temperature superconductor delta-TaN

Magnetic switching driven by spin–orbit torque in topological-insulator-based (Bi0.5Sb0.5)2Te3/Ta/CoFe/Cu/CoFe/IrMn heterostructure

Temperature-Dependent Spin-to-Charge Conversion and Efficient Manipulation of Elliptical THz Waves in Bi 2 Te 3 /TbFeCo Heterostructures

Temperature-Dependent Spin-to-Charge Conversion and Efficient Manipulation of Elliptical THz Waves in Bi2Te3/TbFeCo Heterostructures

Large out-of-plane spin-orbit torque in topological Weyl semimetal candidate TaIrTe4

Spin-orbit torques and spin Hall magnetoresistance generated by twin-free and amorphous Bi0.9Sb0.1 topological insulator films

Magnetization Switching Through Giant Spin–orbit Torque in a Magnetically Doped Topological Insulator Heterostructure

Large Room Temperature Charge-to-Spin Conversion Efficiency in Topological Insulator/CoFeB bilayers

Origin of the giant spin Hall effect in BiSb topological insulator

Spin Injection and Inverse Edelstein Effect in the Surface States of Topological Kondo Insulator SmB6

Lossless Spin-Orbit Torque in Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$

Lossless Spin-Orbit Torque in Antiferromagnetic Topological Insulator MnBi_{2}Te_{4}

Spin-Polarized Tunneling Study on Spin-Momentum Locking in the Topological Insulators

Dirac Surface State-Modulated Spin Dynamics in a Ferrimagnetic Insulator at Room Temperature

Electrical Detection of Spin-Polarized Surface States Conduction in (bi(0.53)sb(0.47))2te3 Topological Insulator.

Antiferromagnetic topological insulating state in Tb$_{0.02}$Bi$_{1.08}$Sb$_{0.9}$Te$_2$S single crystals