Preparation of Y2O3 Coating by Suspension Plasma Spraying and Its Resistance to Plasma Etching
Wen Ma,Zhe Shen,Qi Liu,Yuanming Gao,Yu Bai,Rongxing Li
DOI: https://doi.org/10.15541/jim20230548
IF: 1.292
2024-01-01
Journal of Inorganic Materials
Abstract:With the fierce competition of high-end chips, Y2O3 coating is an important component of plasma etching cavity, corresponding research gradually becomes a research hotspot. Y2O3 coating was prepared on aluminum alloy surface by suspension plasma spraying (SPS). The effects of different process parameters on the phase composition, mechanical properties, microstructure, and dielectric strength of the coating were studied. The effect of microscopic porosity of Y2O3 coating on etching rate was analyzed after etching in CF4/Ar/O-2 mixture for 30, 60 and 120 min, respectively. The microhardness, the porosity, the bonding strength, and the dielectric strength of Y2O3 coating prepared by the optimal process 1 (spraying distance 80 mm, liquid feed rate 35 mL/min, atomizing gas flow rate 15 L/min, horizontal gun moving speed 700 mm/s, vertical moving step 1 mm/step) is (3.78 +/- 0.36) GPa, (2.35 +/- 0.24)%, (36.0 +/- 3.6) MPa, and (29.74 +/- 2.01) kV/mm, respectively. In the mixed plasma gas composed of CF4/Ar/O-2, the Y2O3 coating undergoes physical and chemical reactions, while Ar+ + strongly shocks and bombards the coating to break the chemical bond on the surface. CF2* and F* make Y2O3 continuously etched to form YF3 attaching to the coating surface. At the same time, the physical impact of Ar+ + constantly acts on the surface of the coating, removing the YF3 layer, and a small amount of residual YF3 on the surface of the coating is oxidized and finally forms YOF, resulting in a coating etching rate as low as (11.48 +/- 5.21) nm/min. Y2O3 coating with high density, low porosity and high uniformity can effectively improve the resistance of parts to plasma etching, which is of great significance in semiconductor industry.