Abstract:In this paper, we report a new type of sulfur resistant hydrogenation catalyst, which was obtained by simply phosphating commercial Pd/C catalyst with triphenylphosphine under H-2 atmosphere at 600 degrees C. At this temperature, no palladium phosphides formed in XRD patterns due to the low synthetic temperature. Element analysis, N-2 adsorption-desorption and ICP characterizations show that only a small amount of P has been introduced into Pd, so the phosphorus doping does not change the pore size and surface area of pristine Pd/C. XPS characterization shows that P doping can effectively prevent the substrate adsorption on Pd surface, which relieves the sulfurization rate of Pd. Hence, the phosphorus doping catalyst can fully catalyze the 4-nitrothioanisole to 4-aminothioanisole and exhibits higher activity than Pd/C, which only has 70.9 % conversion. Moreover, the phosphorus doped Pd/C catalyst has better stability than Pd/C and its activity is almost unchanged during the recycle.

A Sulfur-Tolerant Phosphorus Doped Pd/C Catalyst for Hydrogenation of 4-Nitrothioanisole