A Thermal Failure Model for MOSFETs under Repetitive Electromagnetic Pulses

Yong Li,Haiyan Xie,Hui Yan,Jianguo Wang,Zhiqiang Yang

DOI: https://doi.org/10.1109/access.2020.3045621

IF: 3.9

2020-01-01

IEEE Access

Abstract:A thermal failure model for MOSFETs under repetitive electromagnetic pulses is investigated in this paper. The analytic equation to analyze the relationship between the temperature rise and pulse parameters is given by a theoretical derivation. The electro-thermal process of a 180 nm MOSFET is simulated as an example. It shows that the model agrees well with the technology computer aided design (TCAD) results. Some discussions on the influence of the dissipation performance and on the electro-thermal coupled effect are given. Both the theoretical model and the TCAD results indicate that most of the failures occur in 1 or 2 cycles. Further increase in the pulse number does not change the failure probability. Influence of heat dissipation performance of the substrate is discussed. This work is useful for further failure analysis, and is also helpful in protection design for the MOSFET device and circuit under HPMs and other repetitive electromagnetic pulses.