First-Principles study of structural, elastic and electronic properties for the KT-GaBP<sub>2</sub> semiconductor under pressure

Yan-Tong Bian,Sheng-Hui Qian,Xin-Xin Ding,Guang-Hua Liu
DOI: https://doi.org/10.1016/j.mssp.2020.105585
IF: 4.1
2021-01-01
Materials Science in Semiconductor Processing
Abstract:The structural, elastic and electronic properties of KT-GaBP2 under pressure ranging from 0 to 70 GPa were investigated by using density functional theory. The elastic stiffness constants were calculated under different pressures and found that the single crystal KT-GaBP2 is elastically stable in the range from 0 to 70 GPa, and afterwards becomes unstable. It can be inferred that the phase transition may occur in the range of 70 similar to 80 GPa. The universal anisotropy index of single crystal KT-GaBP2, as well as the elastic moduli and Debye temperature for the polycrystal KT-GaBP2 were calculated under different pressures, and the effect of pressure on the elastic properties was studied further. It is found that the single crystal KT-GaBP2 is elastically anisotropic and that the anisotropy increases monotonically with increasing pressure. The polycrystal KT-GaBP2 inclines to resist better volume compression than shape deformation, and it will possess a best thermal conductivity under a certain pressure value within the range of 25 similar to 35 GPa. Finally, the electronic properties of KT-GaBP2 induced by pressure were studied and found that the energy gap decreases monotonically with increasing pressure. Furthermore, the direct energy gap changes into an indirect one as the pressure up to about 70 GPa.
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